JPS5735318A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5735318A
JPS5735318A JP11131780A JP11131780A JPS5735318A JP S5735318 A JPS5735318 A JP S5735318A JP 11131780 A JP11131780 A JP 11131780A JP 11131780 A JP11131780 A JP 11131780A JP S5735318 A JPS5735318 A JP S5735318A
Authority
JP
Japan
Prior art keywords
film
electrode
diffused layer
attaching
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11131780A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0126172B2 (enrdf_load_stackoverflow
Inventor
Masanori Fukumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11131780A priority Critical patent/JPS5735318A/ja
Publication of JPS5735318A publication Critical patent/JPS5735318A/ja
Publication of JPH0126172B2 publication Critical patent/JPH0126172B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP11131780A 1980-08-12 1980-08-12 Manufacture of semiconductor device Granted JPS5735318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11131780A JPS5735318A (en) 1980-08-12 1980-08-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11131780A JPS5735318A (en) 1980-08-12 1980-08-12 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5735318A true JPS5735318A (en) 1982-02-25
JPH0126172B2 JPH0126172B2 (enrdf_load_stackoverflow) 1989-05-22

Family

ID=14558148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11131780A Granted JPS5735318A (en) 1980-08-12 1980-08-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5735318A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61283174A (ja) * 1985-06-07 1986-12-13 Kanegafuchi Chem Ind Co Ltd 耐熱性薄膜光電変換素子およびその製法
JPS62111421A (ja) * 1985-11-09 1987-05-22 Mitsubishi Electric Corp 金属シリサイド膜組成比制御方法
JPS62112323A (ja) * 1985-09-11 1987-05-23 テキサス　インスツルメンツ　インコ−ポレイテツド 半導体面に接触を形成する方法
JPS62160745A (ja) * 1986-01-09 1987-07-16 Fuji Electric Co Ltd 半導体装置
JPS6439775A (en) * 1987-08-06 1989-02-10 Fuji Electric Co Ltd Formation of electrode film of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61283174A (ja) * 1985-06-07 1986-12-13 Kanegafuchi Chem Ind Co Ltd 耐熱性薄膜光電変換素子およびその製法
JPS62112323A (ja) * 1985-09-11 1987-05-23 テキサス　インスツルメンツ　インコ−ポレイテツド 半導体面に接触を形成する方法
JPS62111421A (ja) * 1985-11-09 1987-05-22 Mitsubishi Electric Corp 金属シリサイド膜組成比制御方法
JPS62160745A (ja) * 1986-01-09 1987-07-16 Fuji Electric Co Ltd 半導体装置
JPS6439775A (en) * 1987-08-06 1989-02-10 Fuji Electric Co Ltd Formation of electrode film of semiconductor device

Also Published As

Publication number Publication date
JPH0126172B2 (enrdf_load_stackoverflow) 1989-05-22

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