JPS57207375A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57207375A
JPS57207375A JP9183281A JP9183281A JPS57207375A JP S57207375 A JPS57207375 A JP S57207375A JP 9183281 A JP9183281 A JP 9183281A JP 9183281 A JP9183281 A JP 9183281A JP S57207375 A JPS57207375 A JP S57207375A
Authority
JP
Japan
Prior art keywords
film
polycrystal
patterned
films
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9183281A
Other languages
English (en)
Inventor
Tadatoshi Nozaki
Hidekazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9183281A priority Critical patent/JPS57207375A/ja
Publication of JPS57207375A publication Critical patent/JPS57207375A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
JP9183281A 1981-06-15 1981-06-15 Manufacture of semiconductor device Pending JPS57207375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9183281A JPS57207375A (en) 1981-06-15 1981-06-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9183281A JPS57207375A (en) 1981-06-15 1981-06-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57207375A true JPS57207375A (en) 1982-12-20

Family

ID=14037566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9183281A Pending JPS57207375A (en) 1981-06-15 1981-06-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57207375A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4653173A (en) * 1985-03-04 1987-03-31 Signetics Corporation Method of manufacturing an insulated gate field effect device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4653173A (en) * 1985-03-04 1987-03-31 Signetics Corporation Method of manufacturing an insulated gate field effect device

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