JPS5720473A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS5720473A
JPS5720473A JP9420480A JP9420480A JPS5720473A JP S5720473 A JPS5720473 A JP S5720473A JP 9420480 A JP9420480 A JP 9420480A JP 9420480 A JP9420480 A JP 9420480A JP S5720473 A JPS5720473 A JP S5720473A
Authority
JP
Japan
Prior art keywords
phi2
phi1
phis
stages
bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9420480A
Other languages
Japanese (ja)
Inventor
Hiroyuki Matsumoto
Tetsuo Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP9420480A priority Critical patent/JPS5720473A/en
Publication of JPS5720473A publication Critical patent/JPS5720473A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD

Abstract

PURPOSE:To accomplish a higher density of a device by transferring electric charge by a 2-phase driving on a 1 bit-3 stage basis with on gate voltage VG surface potential phiS characteristics differentiated in the gradient from others among 3 stages. CONSTITUTION:An electrode 13 is provided at a specified space on a p type Si substrate 11 through an SiO2 film 12a with a thickness of t1 and a common electrode 14 is applied at an intermediate position through films 12b and 12c with the thickness of t2>t1 separated from the electrode 13 by insulation. A p<-> layer 15 is provided under the film 12b. Clock voltages phi1 and phi2 are applied on the electrodes 13 and 14 in such a manner as to be the same in the amplitude and different by 90 deg. in the phase to compose one bit in stages V1-V3. The impurity concentration and film thickness are so selected that VG-phiS characteristics are set linear 16 in stages V1 and V3 and linear 17 in the stage V2. As the surface potential phiS turns over in the depth with the amplitudes of phi1 and phi2 including the intersection P, electric charge is transferred with the amplitudes phi1 and phi2 on a 1 bit-3stage basis thereby providing a higher density device.
JP9420480A 1980-07-10 1980-07-10 Charge transfer device Pending JPS5720473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9420480A JPS5720473A (en) 1980-07-10 1980-07-10 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9420480A JPS5720473A (en) 1980-07-10 1980-07-10 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS5720473A true JPS5720473A (en) 1982-02-02

Family

ID=14103765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9420480A Pending JPS5720473A (en) 1980-07-10 1980-07-10 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS5720473A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5189498A (en) * 1989-11-06 1993-02-23 Mitsubishi Denki Kabushiki Kaisha Charge coupled device
US5302543A (en) * 1989-11-06 1994-04-12 Mitsubishi Denki Kabushiki Kaisha Method of making a charge coupled device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5189498A (en) * 1989-11-06 1993-02-23 Mitsubishi Denki Kabushiki Kaisha Charge coupled device
US5302543A (en) * 1989-11-06 1994-04-12 Mitsubishi Denki Kabushiki Kaisha Method of making a charge coupled device

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