JPS57202734A - Method and device for manufacturing of semiconductor - Google Patents
Method and device for manufacturing of semiconductorInfo
- Publication number
- JPS57202734A JPS57202734A JP56088394A JP8839481A JPS57202734A JP S57202734 A JPS57202734 A JP S57202734A JP 56088394 A JP56088394 A JP 56088394A JP 8839481 A JP8839481 A JP 8839481A JP S57202734 A JPS57202734 A JP S57202734A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- etched
- partial region
- substrate
- predetermined amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56088394A JPS57202734A (en) | 1981-06-09 | 1981-06-09 | Method and device for manufacturing of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56088394A JPS57202734A (en) | 1981-06-09 | 1981-06-09 | Method and device for manufacturing of semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57202734A true JPS57202734A (en) | 1982-12-11 |
| JPH0423416B2 JPH0423416B2 (enrdf_load_stackoverflow) | 1992-04-22 |
Family
ID=13941574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56088394A Granted JPS57202734A (en) | 1981-06-09 | 1981-06-09 | Method and device for manufacturing of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57202734A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998044549A1 (en) * | 1997-04-03 | 1998-10-08 | Memc Electronic Materials, Inc. | Flattening process for epitaxial semiconductor wafers |
| US6030887A (en) * | 1998-02-26 | 2000-02-29 | Memc Electronic Materials, Inc. | Flattening process for epitaxial semiconductor wafers |
| US6200908B1 (en) | 1999-08-04 | 2001-03-13 | Memc Electronic Materials, Inc. | Process for reducing waviness in semiconductor wafers |
| JP2005209809A (ja) * | 2004-01-21 | 2005-08-04 | Murata Mfg Co Ltd | エッチング装置およびこれを用いたエッチング方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5179650A (ja) * | 1975-01-08 | 1976-07-12 | Hitachi Ltd | Supatsutaetsuchingusochi |
| JPS557646U (enrdf_load_stackoverflow) * | 1978-06-29 | 1980-01-18 |
-
1981
- 1981-06-09 JP JP56088394A patent/JPS57202734A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5179650A (ja) * | 1975-01-08 | 1976-07-12 | Hitachi Ltd | Supatsutaetsuchingusochi |
| JPS557646U (enrdf_load_stackoverflow) * | 1978-06-29 | 1980-01-18 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998044549A1 (en) * | 1997-04-03 | 1998-10-08 | Memc Electronic Materials, Inc. | Flattening process for epitaxial semiconductor wafers |
| US6030887A (en) * | 1998-02-26 | 2000-02-29 | Memc Electronic Materials, Inc. | Flattening process for epitaxial semiconductor wafers |
| US6200908B1 (en) | 1999-08-04 | 2001-03-13 | Memc Electronic Materials, Inc. | Process for reducing waviness in semiconductor wafers |
| JP2005209809A (ja) * | 2004-01-21 | 2005-08-04 | Murata Mfg Co Ltd | エッチング装置およびこれを用いたエッチング方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0423416B2 (enrdf_load_stackoverflow) | 1992-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS57202734A (en) | Method and device for manufacturing of semiconductor | |
| JPS57130431A (en) | Manufacture of semiconductor device | |
| JPS55157234A (en) | Manufacture of semiconductor device | |
| JPS57164546A (en) | Semiconductor device | |
| JPS55133538A (en) | Manufacturing method of semiconductor device | |
| JPS57120672A (en) | Plasma etching method | |
| JPS5621336A (en) | Manufacture of semiconductor device | |
| JPS5596681A (en) | Method of fabricating semiconductor device | |
| JPS5633841A (en) | Manufacture of semiconductor device | |
| JPS57177525A (en) | Etching method for silicon oxide | |
| JPS5743431A (en) | Manufacture of semiconductor device | |
| JPS57117239A (en) | Forming method for polycrystal silicon pattern | |
| JPS55102269A (en) | Method of fabricating semiconductor device | |
| JPS56133835A (en) | Manufacture of semiconductor device | |
| JPS57202754A (en) | Manufacture of semiconductor device | |
| JPS57173956A (en) | Manufacture of semiconductor device | |
| JPS57124443A (en) | Forming method for electrode layer | |
| JPS5792833A (en) | Manufacture of semiconductor device | |
| JPS5790940A (en) | Manufacture of semiconductor device | |
| JPS55130140A (en) | Fabricating method of semiconductor device | |
| JPS54162472A (en) | Plasma processing method | |
| JPS5799746A (en) | Fabrication of semiconductor device | |
| JPS57155731A (en) | Formation of pattern | |
| JPS5796546A (en) | Semiconductor device | |
| JPS55160445A (en) | Manufacture of semiconductor device |