JPS57202535A - Formation of negative resist pattern - Google Patents
Formation of negative resist patternInfo
- Publication number
- JPS57202535A JPS57202535A JP8756981A JP8756981A JPS57202535A JP S57202535 A JPS57202535 A JP S57202535A JP 8756981 A JP8756981 A JP 8756981A JP 8756981 A JP8756981 A JP 8756981A JP S57202535 A JPS57202535 A JP S57202535A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- plasma
- resist
- resist pattern
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8756981A JPS57202535A (en) | 1981-06-09 | 1981-06-09 | Formation of negative resist pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8756981A JPS57202535A (en) | 1981-06-09 | 1981-06-09 | Formation of negative resist pattern |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57202535A true JPS57202535A (en) | 1982-12-11 |
JPS6360893B2 JPS6360893B2 (en, 2012) | 1988-11-25 |
Family
ID=13918624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8756981A Granted JPS57202535A (en) | 1981-06-09 | 1981-06-09 | Formation of negative resist pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57202535A (en, 2012) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57211143A (en) * | 1981-06-23 | 1982-12-24 | Oki Electric Ind Co Ltd | Formation of micropattern |
JPS60241225A (ja) * | 1984-05-14 | 1985-11-30 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 陰画レジスト像を生成する方法 |
JPS61107346A (ja) * | 1984-10-26 | 1986-05-26 | ユセベ エレクトロニックス,ソシエテ アノニム | フォトレジスト層中にネガ図形を形成する方法 |
JPS61219034A (ja) * | 1985-03-19 | 1986-09-29 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 耐プラズマ性重合体物質の製法 |
JPS62115153A (ja) * | 1985-09-03 | 1987-05-26 | ゼネラル・エレクトリツク・カンパニイ | 有機フイルムから有機物質をパタ−ン化して除去する方法 |
-
1981
- 1981-06-09 JP JP8756981A patent/JPS57202535A/ja active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57211143A (en) * | 1981-06-23 | 1982-12-24 | Oki Electric Ind Co Ltd | Formation of micropattern |
JPS60241225A (ja) * | 1984-05-14 | 1985-11-30 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 陰画レジスト像を生成する方法 |
JPS61107346A (ja) * | 1984-10-26 | 1986-05-26 | ユセベ エレクトロニックス,ソシエテ アノニム | フォトレジスト層中にネガ図形を形成する方法 |
JPH0220869A (ja) * | 1984-10-26 | 1990-01-24 | Ucb Sa | 乾式現像用レジスト |
JPS61219034A (ja) * | 1985-03-19 | 1986-09-29 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 耐プラズマ性重合体物質の製法 |
JPS62115153A (ja) * | 1985-09-03 | 1987-05-26 | ゼネラル・エレクトリツク・カンパニイ | 有機フイルムから有機物質をパタ−ン化して除去する方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6360893B2 (en, 2012) | 1988-11-25 |
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