JPS57199270A - Photoelectric converter - Google Patents

Photoelectric converter

Info

Publication number
JPS57199270A
JPS57199270A JP56084796A JP8479681A JPS57199270A JP S57199270 A JPS57199270 A JP S57199270A JP 56084796 A JP56084796 A JP 56084796A JP 8479681 A JP8479681 A JP 8479681A JP S57199270 A JPS57199270 A JP S57199270A
Authority
JP
Japan
Prior art keywords
film
glass
region
electrode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56084796A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6248912B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP56084796A priority Critical patent/JPS57199270A/ja
Publication of JPS57199270A publication Critical patent/JPS57199270A/ja
Publication of JPS6248912B2 publication Critical patent/JPS6248912B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP56084796A 1981-06-02 1981-06-02 Photoelectric converter Granted JPS57199270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56084796A JPS57199270A (en) 1981-06-02 1981-06-02 Photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56084796A JPS57199270A (en) 1981-06-02 1981-06-02 Photoelectric converter

Publications (2)

Publication Number Publication Date
JPS57199270A true JPS57199270A (en) 1982-12-07
JPS6248912B2 JPS6248912B2 (enrdf_load_stackoverflow) 1987-10-16

Family

ID=13840658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56084796A Granted JPS57199270A (en) 1981-06-02 1981-06-02 Photoelectric converter

Country Status (1)

Country Link
JP (1) JPS57199270A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60500392A (ja) * 1983-01-10 1985-03-22 モ−ビル・ソラ−・エナ−ジ−・コ−ポレ−ション 太陽電池の製造方法
WO2014096443A1 (de) * 2012-12-21 2014-06-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur dotierung von halbleitersubstraten sowie dotiertes halbleitersubstrat

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216110A (en) * 1975-07-28 1977-02-07 Toa Tokushu Denki Kk Signal sound distributor in time sharing exchanger

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216110A (en) * 1975-07-28 1977-02-07 Toa Tokushu Denki Kk Signal sound distributor in time sharing exchanger

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60500392A (ja) * 1983-01-10 1985-03-22 モ−ビル・ソラ−・エナ−ジ−・コ−ポレ−ション 太陽電池の製造方法
WO2014096443A1 (de) * 2012-12-21 2014-06-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur dotierung von halbleitersubstraten sowie dotiertes halbleitersubstrat

Also Published As

Publication number Publication date
JPS6248912B2 (enrdf_load_stackoverflow) 1987-10-16

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