JPS6248912B2 - - Google Patents

Info

Publication number
JPS6248912B2
JPS6248912B2 JP56084796A JP8479681A JPS6248912B2 JP S6248912 B2 JPS6248912 B2 JP S6248912B2 JP 56084796 A JP56084796 A JP 56084796A JP 8479681 A JP8479681 A JP 8479681A JP S6248912 B2 JPS6248912 B2 JP S6248912B2
Authority
JP
Japan
Prior art keywords
semiconductor
conductivity type
semiconductor layer
conversion device
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56084796A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57199270A (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP56084796A priority Critical patent/JPS57199270A/ja
Publication of JPS57199270A publication Critical patent/JPS57199270A/ja
Publication of JPS6248912B2 publication Critical patent/JPS6248912B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP56084796A 1981-06-02 1981-06-02 Photoelectric converter Granted JPS57199270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56084796A JPS57199270A (en) 1981-06-02 1981-06-02 Photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56084796A JPS57199270A (en) 1981-06-02 1981-06-02 Photoelectric converter

Publications (2)

Publication Number Publication Date
JPS57199270A JPS57199270A (en) 1982-12-07
JPS6248912B2 true JPS6248912B2 (enrdf_load_stackoverflow) 1987-10-16

Family

ID=13840658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56084796A Granted JPS57199270A (en) 1981-06-02 1981-06-02 Photoelectric converter

Country Status (1)

Country Link
JP (1) JPS57199270A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451969A (en) * 1983-01-10 1984-06-05 Mobil Solar Energy Corporation Method of fabricating solar cells
DE102012025429A1 (de) * 2012-12-21 2014-06-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216110A (en) * 1975-07-28 1977-02-07 Toa Tokushu Denki Kk Signal sound distributor in time sharing exchanger

Also Published As

Publication number Publication date
JPS57199270A (en) 1982-12-07

Similar Documents

Publication Publication Date Title
CN101199060B (zh) 太阳电池元件和太阳电池元件的制造方法
JP3628108B2 (ja) 太陽電池の製造方法
JP3469729B2 (ja) 太陽電池素子
JP2007266327A (ja) 太陽電池素子
JP2989373B2 (ja) 光電変換装置の製造方法
KR101830775B1 (ko) 유전체의 후면 반사코팅을 가진 태양전지 및 그 생산 방법
JP2015191967A (ja) 太陽電池セルおよびその製造方法
KR101122054B1 (ko) 태양전지의 후면전극 형성방법
TWI650872B (zh) 太陽能電池及其製造方法、太陽能電池模組及太陽能電池發電系統
JP2016139762A (ja) 太陽電池素子の製造方法
JPS6248912B2 (enrdf_load_stackoverflow)
JP6072904B2 (ja) 光起電力素子及びその製造方法
JP2010177444A (ja) 太陽電池素子および太陽電池素子の製造方法
Juvonen et al. High efficiency single crystalline silicon solar cells
JP4127994B2 (ja) 光起電力装置の製造方法
JP2002185024A (ja) 太陽電池及びその製造方法
JPS622472B2 (enrdf_load_stackoverflow)
JPH07193263A (ja) 太陽電池の製造方法
JPS6322633B2 (enrdf_load_stackoverflow)
KR101321538B1 (ko) 벌크형 실리콘 태양 전지 및 그 제조 방법
JPH0750794B2 (ja) 光電変換素子の製造方法
JP4903531B2 (ja) 太陽電池素子
CN108369965A (zh) 太阳能电池和太阳能电池制造方法
JP2975751B2 (ja) 光起電力装置
KR100305671B1 (ko) 적외선 감지장치 및 그의 제조방법