JPS57196579A - Sos/mos transistor and manufacture thereof - Google Patents

Sos/mos transistor and manufacture thereof

Info

Publication number
JPS57196579A
JPS57196579A JP8141681A JP8141681A JPS57196579A JP S57196579 A JPS57196579 A JP S57196579A JP 8141681 A JP8141681 A JP 8141681A JP 8141681 A JP8141681 A JP 8141681A JP S57196579 A JPS57196579 A JP S57196579A
Authority
JP
Japan
Prior art keywords
oxide film
polycrystalline silicon
sos
gate
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8141681A
Other languages
English (en)
Other versions
JPH0514430B2 (ja
Inventor
Masao Fukuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8141681A priority Critical patent/JPS57196579A/ja
Publication of JPS57196579A publication Critical patent/JPS57196579A/ja
Publication of JPH0514430B2 publication Critical patent/JPH0514430B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Element Separation (AREA)
JP8141681A 1981-05-28 1981-05-28 Sos/mos transistor and manufacture thereof Granted JPS57196579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8141681A JPS57196579A (en) 1981-05-28 1981-05-28 Sos/mos transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8141681A JPS57196579A (en) 1981-05-28 1981-05-28 Sos/mos transistor and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57196579A true JPS57196579A (en) 1982-12-02
JPH0514430B2 JPH0514430B2 (ja) 1993-02-25

Family

ID=13745737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8141681A Granted JPS57196579A (en) 1981-05-28 1981-05-28 Sos/mos transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57196579A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184567A (ja) * 1983-04-05 1984-10-19 Nec Corp 透明基板上の半導体デバイスの製造方法
JPH05166919A (ja) * 1991-12-18 1993-07-02 Mitsubishi Electric Corp 半導体装置及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5229157A (en) * 1975-09-01 1977-03-04 Nippon Telegr & Teleph Corp <Ntt> Timer circuit
JPS54153582A (en) * 1978-05-25 1979-12-03 Agency Of Ind Science & Technol Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5229157A (en) * 1975-09-01 1977-03-04 Nippon Telegr & Teleph Corp <Ntt> Timer circuit
JPS54153582A (en) * 1978-05-25 1979-12-03 Agency Of Ind Science & Technol Manufacture for semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184567A (ja) * 1983-04-05 1984-10-19 Nec Corp 透明基板上の半導体デバイスの製造方法
JPH05166919A (ja) * 1991-12-18 1993-07-02 Mitsubishi Electric Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH0514430B2 (ja) 1993-02-25

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