JPS57196528A - Liquid-phase growing device - Google Patents
Liquid-phase growing deviceInfo
- Publication number
- JPS57196528A JPS57196528A JP8056081A JP8056081A JPS57196528A JP S57196528 A JPS57196528 A JP S57196528A JP 8056081 A JP8056081 A JP 8056081A JP 8056081 A JP8056081 A JP 8056081A JP S57196528 A JPS57196528 A JP S57196528A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- substrate holder
- holder unit
- slider
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8056081A JPS57196528A (en) | 1981-05-27 | 1981-05-27 | Liquid-phase growing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8056081A JPS57196528A (en) | 1981-05-27 | 1981-05-27 | Liquid-phase growing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57196528A true JPS57196528A (en) | 1982-12-02 |
| JPS626335B2 JPS626335B2 (enrdf_load_stackoverflow) | 1987-02-10 |
Family
ID=13721715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8056081A Granted JPS57196528A (en) | 1981-05-27 | 1981-05-27 | Liquid-phase growing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57196528A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61270818A (ja) * | 1985-05-25 | 1986-12-01 | Mitsubishi Electric Corp | 液相エピタキシヤル成長装置 |
| JPS63159290A (ja) * | 1986-12-23 | 1988-07-02 | Hitachi Cable Ltd | 液相エピタキシャル成長方法 |
| JPH07149595A (ja) * | 1994-10-21 | 1995-06-13 | Hitachi Cable Ltd | 液相エピタキシャル成長方法 |
-
1981
- 1981-05-27 JP JP8056081A patent/JPS57196528A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61270818A (ja) * | 1985-05-25 | 1986-12-01 | Mitsubishi Electric Corp | 液相エピタキシヤル成長装置 |
| JPS63159290A (ja) * | 1986-12-23 | 1988-07-02 | Hitachi Cable Ltd | 液相エピタキシャル成長方法 |
| JPH07149595A (ja) * | 1994-10-21 | 1995-06-13 | Hitachi Cable Ltd | 液相エピタキシャル成長方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS626335B2 (enrdf_load_stackoverflow) | 1987-02-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS57196528A (en) | Liquid-phase growing device | |
| JPS56158896A (en) | Surface treating device | |
| JPS647622A (en) | Device for treatment of semiconductor substrate | |
| SU882247A1 (ru) | Способ выращивания монокристаллического sic | |
| JPS57198620A (en) | Vapor growth of compound semiconductor | |
| JPS5595320A (en) | Cvd device | |
| JPS5678722A (en) | Automatic device for carrying article in and out of liquid- storing tank | |
| Biryulin et al. | Mechanism of" purification" of gallium arsenide by bismuth | |
| JPS5742598A (en) | Liquid-phase epitaxial growing method | |
| JPS57196527A (en) | Method and device for growing epitaxial layer of semiconductor crystal | |
| JPS56129697A (en) | Liquid-phase epitaxially-growing method and apparatus | |
| JPS57149726A (en) | Manufacture of semiconductor device | |
| JPS5334465A (en) | Manufacture for semiconductor epitaxial grown layer | |
| JPS5732650A (en) | Semiconductor device | |
| JPS5720430A (en) | Epitaxial growing method and device for semiconductor | |
| JPS5732620A (en) | Method for liquid-phase epitaxial growth and growing boat | |
| JPS57128915A (en) | Vapor-phase epitaxial growth device | |
| JPS57193026A (en) | Liquidus epitaxial growing device | |
| JPS5797621A (en) | Boat for liquid phase epitaxial growth | |
| JPS5710927A (en) | Cleaning device | |
| JPS5364465A (en) | Semiconductor crystal production apparatus | |
| JPS5638179A (en) | Water treating apparatus | |
| JPS56150822A (en) | Manufacture of semiconductor device | |
| ES8103382A1 (es) | Sistema mejorado de lavado a contra corriente, capaz de ser acoplado activamente a un aparato de analisis automatico de-fluido sanguineo. | |
| EP0137641A3 (en) | Rapid lpe crystal growth |