JPS5732620A - Method for liquid-phase epitaxial growth and growing boat - Google Patents
Method for liquid-phase epitaxial growth and growing boatInfo
- Publication number
- JPS5732620A JPS5732620A JP10733980A JP10733980A JPS5732620A JP S5732620 A JPS5732620 A JP S5732620A JP 10733980 A JP10733980 A JP 10733980A JP 10733980 A JP10733980 A JP 10733980A JP S5732620 A JPS5732620 A JP S5732620A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- growing
- edge
- solution
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
Abstract
PURPOSE:To reduce the edge growth layer of a wafer and prevent deterioration of a quality by epitaxial growth in the state under which a growing solution makes contact with the side of a substrate edge. CONSTITUTION:A growing solution 14 is separated with partition board 11 of a slider part and poured into a solution tank 13 which is covered with a lid 12. The slider part slides on a boat body (a fixed part) 15 that is equipped with a shallow hole 18 which is for positioning a substrate (a base crystal) 17. A hole 19 for the use of the solution is fitted along the outer edge of the shallow hole 18 so that the growing solution makes contact with the side of the substrate. When the growing is performed on the substrate, the growing solution is positioned so that it wets the side of the edge of the substrate too, and the edge of the substrate is rounded by a meltback diffusion technique which is carried out just before growing, thereby preventing the creation of edge layer growth of the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10733980A JPS5732620A (en) | 1980-08-05 | 1980-08-05 | Method for liquid-phase epitaxial growth and growing boat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10733980A JPS5732620A (en) | 1980-08-05 | 1980-08-05 | Method for liquid-phase epitaxial growth and growing boat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5732620A true JPS5732620A (en) | 1982-02-22 |
Family
ID=14456540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10733980A Pending JPS5732620A (en) | 1980-08-05 | 1980-08-05 | Method for liquid-phase epitaxial growth and growing boat |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5732620A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6169120A (en) * | 1984-09-12 | 1986-04-09 | Nec Corp | Boat for liquid growing |
-
1980
- 1980-08-05 JP JP10733980A patent/JPS5732620A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6169120A (en) * | 1984-09-12 | 1986-04-09 | Nec Corp | Boat for liquid growing |
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