JPS57157585A - Manufacture of semiconductor light emitting device - Google Patents

Abstract

PURPOSE:To facilitate the confirmation of the position of an uneven part by slightly reducing the size of a solution reservoir disposed on a semicondutor substrate when a semiconductor layer is grown by a liquid phase epitaxially growing method on the substrate formed with a concave or convex part on the surface and not forming the grown layer on the surfaces of both ends of the substrate. CONSTITUTION:A slider 3 having a head 3a containing a semiconductor substrate 4 is slid under the solution reservoirs 1a of a boat 1 having a plurality of solution reservoirs 1a containing crystal growing solution 2, the desired semiconductor layer is laminated on the substrate 4, and is epitaxially grown in liquid phase. In this structure, the area of the hole of the head 3a is formed slightly larger than the bottom area of the reservoirs 1a, and the substrate 4 having a concave or convex part on the surface is disposed at the center in growing. In this manner, the grown layer does not exist at the periphery of the surface of the substrate 4, and accordinly the position of the uneven part can be confirmed directly, thereby facilitating the position at the time of mounting electrodes.