JPS626335B2 - - Google Patents

Info

Publication number
JPS626335B2
JPS626335B2 JP8056081A JP8056081A JPS626335B2 JP S626335 B2 JPS626335 B2 JP S626335B2 JP 8056081 A JP8056081 A JP 8056081A JP 8056081 A JP8056081 A JP 8056081A JP S626335 B2 JPS626335 B2 JP S626335B2
Authority
JP
Japan
Prior art keywords
melt
holding device
substrate
epitaxial growth
storage chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8056081A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57196528A (en
Inventor
Takao Oda
Susumu Yoshida
Kotaro Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8056081A priority Critical patent/JPS57196528A/ja
Publication of JPS57196528A publication Critical patent/JPS57196528A/ja
Publication of JPS626335B2 publication Critical patent/JPS626335B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP8056081A 1981-05-27 1981-05-27 Liquid-phase growing device Granted JPS57196528A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8056081A JPS57196528A (en) 1981-05-27 1981-05-27 Liquid-phase growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8056081A JPS57196528A (en) 1981-05-27 1981-05-27 Liquid-phase growing device

Publications (2)

Publication Number Publication Date
JPS57196528A JPS57196528A (en) 1982-12-02
JPS626335B2 true JPS626335B2 (enrdf_load_stackoverflow) 1987-02-10

Family

ID=13721715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8056081A Granted JPS57196528A (en) 1981-05-27 1981-05-27 Liquid-phase growing device

Country Status (1)

Country Link
JP (1) JPS57196528A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61270818A (ja) * 1985-05-25 1986-12-01 Mitsubishi Electric Corp 液相エピタキシヤル成長装置
JPS63159290A (ja) * 1986-12-23 1988-07-02 Hitachi Cable Ltd 液相エピタキシャル成長方法
JP2545761B2 (ja) * 1994-10-21 1996-10-23 日立電線株式会社 液相エピタキシャル成長方法

Also Published As

Publication number Publication date
JPS57196528A (en) 1982-12-02

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