JPH0558563B2 - - Google Patents
Info
- Publication number
- JPH0558563B2 JPH0558563B2 JP14924485A JP14924485A JPH0558563B2 JP H0558563 B2 JPH0558563 B2 JP H0558563B2 JP 14924485 A JP14924485 A JP 14924485A JP 14924485 A JP14924485 A JP 14924485A JP H0558563 B2 JPH0558563 B2 JP H0558563B2
- Authority
- JP
- Japan
- Prior art keywords
- solution
- substrate
- growth
- piston
- reservoir
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 57
- 239000007791 liquid phase Substances 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 5
- 239000000243 solution Substances 0.000 description 67
- 239000010410 layer Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 238000003860 storage Methods 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012047 saturated solution Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical group [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60149244A JPS6211223A (ja) | 1985-07-09 | 1985-07-09 | 液相エピタキシヤル成長装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60149244A JPS6211223A (ja) | 1985-07-09 | 1985-07-09 | 液相エピタキシヤル成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6211223A JPS6211223A (ja) | 1987-01-20 |
JPH0558563B2 true JPH0558563B2 (enrdf_load_stackoverflow) | 1993-08-26 |
Family
ID=15471028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60149244A Granted JPS6211223A (ja) | 1985-07-09 | 1985-07-09 | 液相エピタキシヤル成長装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6211223A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5477044B2 (ja) | 2009-06-30 | 2014-04-23 | 株式会社ジェイテクト | 遊星歯車機構 |
-
1985
- 1985-07-09 JP JP60149244A patent/JPS6211223A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6211223A (ja) | 1987-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0558563B2 (enrdf_load_stackoverflow) | ||
US4357897A (en) | Device for epitaxially providing a layer of semiconductor material | |
US3762367A (en) | Growth apparatus for a liquid growth multi-layer film | |
KR890004544B1 (ko) | 혼합 반도체의 액상 에피택시를 위한 보우트 | |
JPH04960B2 (enrdf_load_stackoverflow) | ||
JPS626337B2 (enrdf_load_stackoverflow) | ||
KR890004545B1 (ko) | 혼합반도체의 액상 에피택시를 위한 보우트 | |
KR940006348Y1 (ko) | 광반도체 제조장치 | |
JP2666584B2 (ja) | 液相エピタキシャル成長装置 | |
JPH0694398B2 (ja) | 液相エピタキシヤル成長方法 | |
JP2817298B2 (ja) | 気相エピタキシャル成長装置 | |
JPH0694399B2 (ja) | 液相エピタキシヤル成長方法及びその装置 | |
JPS61261291A (ja) | 液相エピタキシヤル成長方法およびそのための装置 | |
JP2005032893A (ja) | 化合物半導体の気相成長方法 | |
JPH0538063Y2 (enrdf_load_stackoverflow) | ||
JPS62128522A (ja) | 液相成長方法 | |
JP2543791B2 (ja) | 液相エピタキシャル成長法 | |
JPS59164693A (ja) | 液相エピタキシヤル成長装置 | |
JP2002261321A (ja) | 半導体発光装置 | |
JPH06291068A (ja) | 液相エピタキシャル成長方法 | |
Denbaars et al. | The growth of AIGaAs/GaAs heterostructures by atomic layer epitaxy | |
JP2006173338A (ja) | 発光ダイオード用エピタキシャルウェハの製造方法 | |
JPS627696A (ja) | 液相エピタキシャル成長方法及びその装置 | |
KR100349596B1 (ko) | 박막성장장치 | |
Chen et al. | Growth and characterization of device quality GaAs produced by laser-assisted atomic layer epitaxy using triethylgallium |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |