JPH0260052B2 - - Google Patents

Info

Publication number
JPH0260052B2
JPH0260052B2 JP5670984A JP5670984A JPH0260052B2 JP H0260052 B2 JPH0260052 B2 JP H0260052B2 JP 5670984 A JP5670984 A JP 5670984A JP 5670984 A JP5670984 A JP 5670984A JP H0260052 B2 JPH0260052 B2 JP H0260052B2
Authority
JP
Japan
Prior art keywords
chamber
slider
boat body
epitaxial growth
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5670984A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60198720A (ja
Inventor
Takao Oda
Mari Kato
Kotaro Mitsui
Susumu Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5670984A priority Critical patent/JPS60198720A/ja
Publication of JPS60198720A publication Critical patent/JPS60198720A/ja
Publication of JPH0260052B2 publication Critical patent/JPH0260052B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02625Liquid deposition using melted materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP5670984A 1984-03-22 1984-03-22 液相エピタキシヤル結晶成長装置 Granted JPS60198720A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5670984A JPS60198720A (ja) 1984-03-22 1984-03-22 液相エピタキシヤル結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5670984A JPS60198720A (ja) 1984-03-22 1984-03-22 液相エピタキシヤル結晶成長装置

Publications (2)

Publication Number Publication Date
JPS60198720A JPS60198720A (ja) 1985-10-08
JPH0260052B2 true JPH0260052B2 (enrdf_load_stackoverflow) 1990-12-14

Family

ID=13035002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5670984A Granted JPS60198720A (ja) 1984-03-22 1984-03-22 液相エピタキシヤル結晶成長装置

Country Status (1)

Country Link
JP (1) JPS60198720A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS60198720A (ja) 1985-10-08

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