JPS60198720A - 液相エピタキシヤル結晶成長装置 - Google Patents
液相エピタキシヤル結晶成長装置Info
- Publication number
- JPS60198720A JPS60198720A JP5670984A JP5670984A JPS60198720A JP S60198720 A JPS60198720 A JP S60198720A JP 5670984 A JP5670984 A JP 5670984A JP 5670984 A JP5670984 A JP 5670984A JP S60198720 A JPS60198720 A JP S60198720A
- Authority
- JP
- Japan
- Prior art keywords
- slider
- chamber
- opening
- epitaxial growth
- boat body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 17
- 239000007791 liquid phase Substances 0.000 title description 7
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000005192 partition Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 1
- 238000004891 communication Methods 0.000 abstract description 4
- 239000000155 melt Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002258 gallium Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5670984A JPS60198720A (ja) | 1984-03-22 | 1984-03-22 | 液相エピタキシヤル結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5670984A JPS60198720A (ja) | 1984-03-22 | 1984-03-22 | 液相エピタキシヤル結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60198720A true JPS60198720A (ja) | 1985-10-08 |
| JPH0260052B2 JPH0260052B2 (enrdf_load_stackoverflow) | 1990-12-14 |
Family
ID=13035002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5670984A Granted JPS60198720A (ja) | 1984-03-22 | 1984-03-22 | 液相エピタキシヤル結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60198720A (enrdf_load_stackoverflow) |
-
1984
- 1984-03-22 JP JP5670984A patent/JPS60198720A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0260052B2 (enrdf_load_stackoverflow) | 1990-12-14 |
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