JPS6359529B2 - - Google Patents
Info
- Publication number
- JPS6359529B2 JPS6359529B2 JP11937382A JP11937382A JPS6359529B2 JP S6359529 B2 JPS6359529 B2 JP S6359529B2 JP 11937382 A JP11937382 A JP 11937382A JP 11937382 A JP11937382 A JP 11937382A JP S6359529 B2 JPS6359529 B2 JP S6359529B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate holder
- storage chamber
- melt
- epitaxial growth
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 34
- 239000007791 liquid phase Substances 0.000 claims description 17
- 229920006395 saturated elastomer Polymers 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 11
- 238000005192 partition Methods 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 239000000155 melt Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11937382A JPS599913A (ja) | 1982-07-07 | 1982-07-07 | 液相エピタキシヤル成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11937382A JPS599913A (ja) | 1982-07-07 | 1982-07-07 | 液相エピタキシヤル成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS599913A JPS599913A (ja) | 1984-01-19 |
| JPS6359529B2 true JPS6359529B2 (enrdf_load_stackoverflow) | 1988-11-21 |
Family
ID=14759898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11937382A Granted JPS599913A (ja) | 1982-07-07 | 1982-07-07 | 液相エピタキシヤル成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS599913A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09299129A (ja) * | 1996-05-09 | 1997-11-25 | Roosutobiifu Kamakurayama:Kk | 荷物運搬具 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109698064B (zh) * | 2019-01-08 | 2020-10-16 | 重庆华虹仪表有限公司 | 提高低压互感器生产效率的注料模具及其应用工艺 |
-
1982
- 1982-07-07 JP JP11937382A patent/JPS599913A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09299129A (ja) * | 1996-05-09 | 1997-11-25 | Roosutobiifu Kamakurayama:Kk | 荷物運搬具 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS599913A (ja) | 1984-01-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3690965A (en) | Semiconductor epitaxial growth from solution | |
| US20110012235A1 (en) | Method of growing group iii nitride crystal, group iii nitride crystal grown thereby, group iii nitride crystal growing apparatus and semiconductor device | |
| JP2001064098A (ja) | 結晶成長方法および結晶成長装置およびｉｉｉ族窒化物結晶 | |
| JPS6359529B2 (enrdf_load_stackoverflow) | ||
| US3549401A (en) | Method of making electroluminescent gallium phosphide diodes | |
| US3925117A (en) | Method for the two-stage epitaxial growth of iii' v semiconductor compounds | |
| US4574730A (en) | Melt dispensing liquid phase epitaxy boat | |
| JPS6136395B2 (enrdf_load_stackoverflow) | ||
| JPH0260052B2 (enrdf_load_stackoverflow) | ||
| JPH043101B2 (enrdf_load_stackoverflow) | ||
| JPS626335B2 (enrdf_load_stackoverflow) | ||
| JPS6128635B2 (enrdf_load_stackoverflow) | ||
| JPS6273625A (ja) | 液相エピタキシヤル成長装置 | |
| US4307680A (en) | Growth of semiconductor compounds | |
| JPS63169724A (ja) | 液相エピタキシヤル成長装置 | |
| US4390379A (en) | Elimination of edge growth in liquid phase epitaxy | |
| EP0394826A2 (en) | Liquid crystal epitaxial growing method and apparatus therefor | |
| JPS5920639B2 (ja) | 液相エピタキシヤル成長方法 | |
| JPH0279422A (ja) | 液相エピタキシヤル成長装置及び成長方法 | |
| US4412502A (en) | Apparatus for the elimination of edge growth in liquid phase epitaxy | |
| JPH01145398A (ja) | 燐化ガリウムの液相エピタキシヤル成長方法 | |
| JPH06128079A (ja) | 縦型液相エピタキシャル成長装置 | |
| JPS621257Y2 (enrdf_load_stackoverflow) | ||
| JPH03227014A (ja) | 液相エピタキシャル成長装置 | |
| JPH04321593A (ja) | 液相エピタキシャル成長方法 |