JPS6128635B2 - - Google Patents
Info
- Publication number
- JPS6128635B2 JPS6128635B2 JP5956078A JP5956078A JPS6128635B2 JP S6128635 B2 JPS6128635 B2 JP S6128635B2 JP 5956078 A JP5956078 A JP 5956078A JP 5956078 A JP5956078 A JP 5956078A JP S6128635 B2 JPS6128635 B2 JP S6128635B2
- Authority
- JP
- Japan
- Prior art keywords
- melt
- storage chamber
- substrate
- type
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 53
- 239000000155 melt Substances 0.000 claims description 37
- 239000007791 liquid phase Substances 0.000 claims description 7
- 229910005540 GaP Inorganic materials 0.000 description 14
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 14
- 238000000034 method Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5956078A JPS54150376A (en) | 1978-05-18 | 1978-05-18 | Liquid phase epitaxial growth apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5956078A JPS54150376A (en) | 1978-05-18 | 1978-05-18 | Liquid phase epitaxial growth apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54150376A JPS54150376A (en) | 1979-11-26 |
JPS6128635B2 true JPS6128635B2 (enrdf_load_stackoverflow) | 1986-07-01 |
Family
ID=13116746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5956078A Granted JPS54150376A (en) | 1978-05-18 | 1978-05-18 | Liquid phase epitaxial growth apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54150376A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2481325A1 (fr) * | 1980-04-23 | 1981-10-30 | Radiotechnique Compelec | Nacelle utilisable pour des depots epitaxiques multicouches en phase liquide et procede de depot mettant en jeu ladite nacelle |
-
1978
- 1978-05-18 JP JP5956078A patent/JPS54150376A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS54150376A (en) | 1979-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3854447A (en) | Apparatus for deposition of semiconductor thin layers | |
JPS6128635B2 (enrdf_load_stackoverflow) | ||
US3940296A (en) | Method for growing epitaxial layers from the liquid phase | |
US4357897A (en) | Device for epitaxially providing a layer of semiconductor material | |
US4338877A (en) | Apparatus for making semiconductor devices | |
US3785884A (en) | Method for depositing a semiconductor material on the substrate from the liquid phase | |
US4386975A (en) | Method for the manufacture of epitaxial Ga1-x Alx As:Si film | |
US5064780A (en) | Method of obtaining a ternary monocrystalline layer by means of hetero-epitaxy on a binary layer and a crucible suitable for putting the method into effect | |
AU7143987A (en) | Forming crystalline deposited film | |
JPS5812230B2 (ja) | エキソウエピタキシヤルセイチヨウホウホウ | |
KR890004544B1 (ko) | 혼합 반도체의 액상 에피택시를 위한 보우트 | |
JPS6136395B2 (enrdf_load_stackoverflow) | ||
JPH0369587A (ja) | 液相エピタキシャル成長装置 | |
JPS6359529B2 (enrdf_load_stackoverflow) | ||
JPS587052B2 (ja) | 半導体結晶の液相成長装置 | |
RU1306175C (ru) | Устройство для жидкофазной эпитаксии | |
US4412502A (en) | Apparatus for the elimination of edge growth in liquid phase epitaxy | |
JPH04142730A (ja) | 液相結晶成長用ボート | |
JP2666584B2 (ja) | 液相エピタキシャル成長装置 | |
JPS6439719A (en) | Epitaxial growth | |
JPS5587427A (en) | Method and apparatus for liquid-phase epitaxial growth | |
KR890004545B1 (ko) | 혼합반도체의 액상 에피택시를 위한 보우트 | |
JPS5574195A (en) | Manufacturing semiconductor laser | |
JPS54133093A (en) | Manufacture for gallium phosphide green color light emitting element | |
JPS626337B2 (enrdf_load_stackoverflow) |