JPS57193026A - Liquidus epitaxial growing device - Google Patents

Liquidus epitaxial growing device

Info

Publication number
JPS57193026A
JPS57193026A JP7850181A JP7850181A JPS57193026A JP S57193026 A JPS57193026 A JP S57193026A JP 7850181 A JP7850181 A JP 7850181A JP 7850181 A JP7850181 A JP 7850181A JP S57193026 A JPS57193026 A JP S57193026A
Authority
JP
Japan
Prior art keywords
melting liquid
boat
good
leakage
starts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7850181A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0258770B2 (OSRAM
Inventor
Hiromi Takasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Tottori Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP7850181A priority Critical patent/JPS57193026A/ja
Publication of JPS57193026A publication Critical patent/JPS57193026A/ja
Publication of JPH0258770B2 publication Critical patent/JPH0258770B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/068—Substrate holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
JP7850181A 1981-05-22 1981-05-22 Liquidus epitaxial growing device Granted JPS57193026A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7850181A JPS57193026A (en) 1981-05-22 1981-05-22 Liquidus epitaxial growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7850181A JPS57193026A (en) 1981-05-22 1981-05-22 Liquidus epitaxial growing device

Publications (2)

Publication Number Publication Date
JPS57193026A true JPS57193026A (en) 1982-11-27
JPH0258770B2 JPH0258770B2 (OSRAM) 1990-12-10

Family

ID=13663700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7850181A Granted JPS57193026A (en) 1981-05-22 1981-05-22 Liquidus epitaxial growing device

Country Status (1)

Country Link
JP (1) JPS57193026A (OSRAM)

Also Published As

Publication number Publication date
JPH0258770B2 (OSRAM) 1990-12-10

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