KR940001501B1 - Attaching method between semiconductor - Google Patents

Attaching method between semiconductor

Info

Publication number
KR940001501B1
KR940001501B1 KR9102545A KR910002545A KR940001501B1 KR 940001501 B1 KR940001501 B1 KR 940001501B1 KR 9102545 A KR9102545 A KR 9102545A KR 910002545 A KR910002545 A KR 910002545A KR 940001501 B1 KR940001501 B1 KR 940001501B1
Authority
KR
South Korea
Prior art keywords
semiconductor
negative
protection layer
positive ion
thin film
Prior art date
Application number
KR9102545A
Other languages
Korean (ko)
Other versions
KR920017286A (en
Inventor
Ji-Bom Yu
Hyo-Hun Park
Yong-Tak Lee
Original Assignee
Korea Electronics Telecomm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Electronics Telecomm filed Critical Korea Electronics Telecomm
Priority to KR9102545A priority Critical patent/KR940001501B1/en
Publication of KR920017286A publication Critical patent/KR920017286A/en
Application granted granted Critical
Publication of KR940001501B1 publication Critical patent/KR940001501B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

The method for bonding same or different semiconductors comprises the steps of: (a) growing a protection layer on a first and a second semiconductor; (b) depositing a positive ion type metal thin film of a bonding chemical semiconductor on the protection layer of the first semiconductor, but a negative one on the protection layer of the second one; (c) placing the second semiconductor upside down over the first semiconductor; and (d) heating the laminated semiconductor at which the temperature is higher than the positive ion type metal thin film, but lower than the negative one so that the chemical semiconductor is formed by the reaction between the solid state having negative ion and the liquid state having positive ion.
KR9102545A 1991-02-13 1991-02-13 Attaching method between semiconductor KR940001501B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR9102545A KR940001501B1 (en) 1991-02-13 1991-02-13 Attaching method between semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR9102545A KR940001501B1 (en) 1991-02-13 1991-02-13 Attaching method between semiconductor

Publications (2)

Publication Number Publication Date
KR920017286A KR920017286A (en) 1992-09-26
KR940001501B1 true KR940001501B1 (en) 1994-02-23

Family

ID=19311174

Family Applications (1)

Application Number Title Priority Date Filing Date
KR9102545A KR940001501B1 (en) 1991-02-13 1991-02-13 Attaching method between semiconductor

Country Status (1)

Country Link
KR (1) KR940001501B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100620451B1 (en) * 2005-01-10 2006-09-11 삼성전자주식회사 A metal oxidation alloy layer, method of manufacturing a metal oxidation alloy layer, and method of manufacturing a gate structure and a capacitor using the same

Also Published As

Publication number Publication date
KR920017286A (en) 1992-09-26

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