JPH025529Y2 - - Google Patents

Info

Publication number
JPH025529Y2
JPH025529Y2 JP1982157675U JP15767582U JPH025529Y2 JP H025529 Y2 JPH025529 Y2 JP H025529Y2 JP 1982157675 U JP1982157675 U JP 1982157675U JP 15767582 U JP15767582 U JP 15767582U JP H025529 Y2 JPH025529 Y2 JP H025529Y2
Authority
JP
Japan
Prior art keywords
melt
boat
substrate
epitaxial growth
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1982157675U
Other languages
English (en)
Japanese (ja)
Other versions
JPS5961531U (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15767582U priority Critical patent/JPS5961531U/ja
Publication of JPS5961531U publication Critical patent/JPS5961531U/ja
Application granted granted Critical
Publication of JPH025529Y2 publication Critical patent/JPH025529Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP15767582U 1982-10-19 1982-10-19 液相エピタキシヤル成長装置 Granted JPS5961531U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15767582U JPS5961531U (ja) 1982-10-19 1982-10-19 液相エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15767582U JPS5961531U (ja) 1982-10-19 1982-10-19 液相エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS5961531U JPS5961531U (ja) 1984-04-23
JPH025529Y2 true JPH025529Y2 (OSRAM) 1990-02-09

Family

ID=30347559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15767582U Granted JPS5961531U (ja) 1982-10-19 1982-10-19 液相エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS5961531U (OSRAM)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5623956A (en) * 1979-08-01 1981-03-06 Tokyo Electric Co Ltd Automatic electric moxa cautery device
JPS58138330U (ja) * 1982-03-11 1983-09-17 日本電気株式会社 液相エピタキシヤル成長装置

Also Published As

Publication number Publication date
JPS5961531U (ja) 1984-04-23

Similar Documents

Publication Publication Date Title
US3802967A (en) Iii-v compound on insulating substrate and its preparation and use
EP0250603A4 (en) PROCESS FOR FORMING A THIN COMPOUND SEMICONDUCTOR FILM.
JPH025529Y2 (OSRAM)
EP0177903A2 (en) Semiconductor device having a gallium arsenide crystal layer grown on a silicon substrate and method for producing it
JPS6255688B2 (OSRAM)
JPS6230692B2 (OSRAM)
US6916373B2 (en) Semiconductor manufacturing method
JP2563937B2 (ja) ▲ｉｉｉ▼−▲ｖ▼族化合物半導体結晶基板
JP2528912B2 (ja) 半導体成長装置
JPS5895819A (ja) 半導体ウエ−ハ
JPS63248796A (ja) 分子線エピタキシヤル成長方法及び成長装置
JPS61141118A (ja) 気相成長方法
JPS57193026A (en) Liquidus epitaxial growing device
JPH0279422A (ja) 液相エピタキシヤル成長装置及び成長方法
JP3531205B2 (ja) エピタキシャル成長用基板およびエピタキシャルウエハ
JP2001135586A (ja) エピタキシャル成長装置および半導体装置の製造方法
JPS5965434A (ja) 化合物半導体の気相エツチング方法
JPS57149727A (en) Heating base of a vapor growth semiconductor
JPH04188720A (ja) 気相成長用サセプタのエッチング方法
JPH03256324A (ja) 半導体結晶基板の製造方法
JPH03115189A (ja) 結晶成長方法およびそれに用いる基板ホルダー
JPS63190795A (ja) 液相エピタキシヤル成長方法
JPS6321286A (ja) 異種基板上の化合物半導体エピタキシヤル成長方法
JPS58106820A (ja) 膜形成装置
JPH033322A (ja) 液相エピタキシャル成長方法