JPS57186344A - Semiconductor device sealed in glass tube - Google Patents

Semiconductor device sealed in glass tube

Info

Publication number
JPS57186344A
JPS57186344A JP7102681A JP7102681A JPS57186344A JP S57186344 A JPS57186344 A JP S57186344A JP 7102681 A JP7102681 A JP 7102681A JP 7102681 A JP7102681 A JP 7102681A JP S57186344 A JPS57186344 A JP S57186344A
Authority
JP
Japan
Prior art keywords
junction
element body
electrode
glass tube
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7102681A
Other languages
Japanese (ja)
Inventor
Misao Saga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FUJI DENKI SOUGOU KENKYUSHO KK
Fuji Electric Co Ltd
Original Assignee
FUJI DENKI SOUGOU KENKYUSHO KK
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FUJI DENKI SOUGOU KENKYUSHO KK, Fuji Electric Corporate Research and Development Ltd filed Critical FUJI DENKI SOUGOU KENKYUSHO KK
Priority to JP7102681A priority Critical patent/JPS57186344A/en
Publication of JPS57186344A publication Critical patent/JPS57186344A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To seal an element body, a p-N junction thereof is positioned at a shallow location, by the glass pipe in excellent yield by positioning an amorphous semiconductor layer between an electrode formed at the upper side of the P- N junction and the element body. CONSTITUTION:The P type amorphous Si 6 is deposited onto a P type Si board 11 with the P-N junction through the glow discharge of a reaction gas obtained by adding B3H4 to SiH4 and H2. In this case, the P-N junction does not move because the temperature of the Si board 11 may be 250-300 deg.C. The P type amorphous Si can be shaped at 300 deg.C or lower even when using a sputtering method. The evaporating layer 7 of Cr and Au and an Ag bump electrode 2 are formed through a conventional method. The element body 1 is fixed onto the end section 4 of a lead wire 3, the end section of another lead wire is contacted with the bump electrode 2, the end sections are covered with the glass tube 5, and the glass tube is heated at 750 deg.C or higher to fusion-weld the pipe to the lead wire 3, and cooled and contacted. Since the amorphous layer is also positioned between the electrode 2 and the element body 1 at that time, an electrode metal does not intrude into an N-layer 13, and the electrical characteristics of the device having the shallow P-N junction are not changed.
JP7102681A 1981-05-12 1981-05-12 Semiconductor device sealed in glass tube Pending JPS57186344A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7102681A JPS57186344A (en) 1981-05-12 1981-05-12 Semiconductor device sealed in glass tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7102681A JPS57186344A (en) 1981-05-12 1981-05-12 Semiconductor device sealed in glass tube

Publications (1)

Publication Number Publication Date
JPS57186344A true JPS57186344A (en) 1982-11-16

Family

ID=13448598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7102681A Pending JPS57186344A (en) 1981-05-12 1981-05-12 Semiconductor device sealed in glass tube

Country Status (1)

Country Link
JP (1) JPS57186344A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62210649A (en) * 1986-03-12 1987-09-16 Toshiba Corp Semiconductor device and manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5410668A (en) * 1977-06-25 1979-01-26 Fujitsu Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5410668A (en) * 1977-06-25 1979-01-26 Fujitsu Ltd Production of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62210649A (en) * 1986-03-12 1987-09-16 Toshiba Corp Semiconductor device and manufacture thereof
JPH0328058B2 (en) * 1986-03-12 1991-04-17 Tokyo Shibaura Electric Co

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