JPS5480680A - Semiconductor device of glass sealing - Google Patents

Semiconductor device of glass sealing

Info

Publication number
JPS5480680A
JPS5480680A JP14835777A JP14835777A JPS5480680A JP S5480680 A JPS5480680 A JP S5480680A JP 14835777 A JP14835777 A JP 14835777A JP 14835777 A JP14835777 A JP 14835777A JP S5480680 A JPS5480680 A JP S5480680A
Authority
JP
Japan
Prior art keywords
semiconductor
electrode
external
pair
bonded via
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14835777A
Other languages
Japanese (ja)
Inventor
Haruto Osawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14835777A priority Critical patent/JPS5480680A/en
Publication of JPS5480680A publication Critical patent/JPS5480680A/en
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To make thin, reduce the material cost, and to make easy for lead grounding, by clipping the semiconductor with external bottom surfaces of a pair of cup electrodes, and by connecting leads at the inner bottom surface of electrode.
CONSTITUTION: The device is formed with a pair of cup type electrodes made of molybdenum plate material, silicon semiconductor 2 bonded via the junction layer clipped with the external surfaces of the electrode 1, silicon substrate 2 bonded via the junction layer clipped with the external bottom surfaces of the electrode 1, glass 3 sealing the semiconductor 2 through the coating of the wall outside between the semiconductor 2 and the electrode 1, nickel coating layer 4 formed on the inner surface bottom and circumference inner surface, and lead 5 consisting of copper or copper alloy. Further, as the material of cup type electrodes, the material having thermal expansion coefficient close to the semiconductor, such as cobalt can be used.
COPYRIGHT: (C)1979,JPO&Japio
JP14835777A 1977-12-10 1977-12-10 Semiconductor device of glass sealing Pending JPS5480680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14835777A JPS5480680A (en) 1977-12-10 1977-12-10 Semiconductor device of glass sealing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14835777A JPS5480680A (en) 1977-12-10 1977-12-10 Semiconductor device of glass sealing

Publications (1)

Publication Number Publication Date
JPS5480680A true JPS5480680A (en) 1979-06-27

Family

ID=15450938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14835777A Pending JPS5480680A (en) 1977-12-10 1977-12-10 Semiconductor device of glass sealing

Country Status (1)

Country Link
JP (1) JPS5480680A (en)

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