JPS57180174A - Manufacturing method for semiconductor device - Google Patents

Manufacturing method for semiconductor device

Info

Publication number
JPS57180174A
JPS57180174A JP56065541A JP6554181A JPS57180174A JP S57180174 A JPS57180174 A JP S57180174A JP 56065541 A JP56065541 A JP 56065541A JP 6554181 A JP6554181 A JP 6554181A JP S57180174 A JPS57180174 A JP S57180174A
Authority
JP
Japan
Prior art keywords
film
layer
substrate
high concentration
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56065541A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0546097B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56065541A priority Critical patent/JPS57180174A/ja
Publication of JPS57180174A publication Critical patent/JPS57180174A/ja
Publication of JPH0546097B2 publication Critical patent/JPH0546097B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP56065541A 1981-04-30 1981-04-30 Manufacturing method for semiconductor device Granted JPS57180174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56065541A JPS57180174A (en) 1981-04-30 1981-04-30 Manufacturing method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56065541A JPS57180174A (en) 1981-04-30 1981-04-30 Manufacturing method for semiconductor device

Publications (2)

Publication Number Publication Date
JPS57180174A true JPS57180174A (en) 1982-11-06
JPH0546097B2 JPH0546097B2 (enrdf_load_stackoverflow) 1993-07-13

Family

ID=13289974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56065541A Granted JPS57180174A (en) 1981-04-30 1981-04-30 Manufacturing method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS57180174A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151471A (ja) * 1983-02-17 1984-08-29 Mitsubishi Electric Corp 半導体装置
JPS59189677A (ja) * 1983-04-13 1984-10-27 Fujitsu Ltd 半導体装置の製造方法
JPS63141373A (ja) * 1986-11-18 1988-06-13 シーメンス、アクチエンゲゼルシヤフト Ｍｏｓ電界効果トランジスタ構造、集積回路とその製法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51108775A (en) * 1975-03-20 1976-09-27 Fujitsu Ltd Handotaisochino seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51108775A (en) * 1975-03-20 1976-09-27 Fujitsu Ltd Handotaisochino seizohoho

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151471A (ja) * 1983-02-17 1984-08-29 Mitsubishi Electric Corp 半導体装置
JPS59189677A (ja) * 1983-04-13 1984-10-27 Fujitsu Ltd 半導体装置の製造方法
JPS63141373A (ja) * 1986-11-18 1988-06-13 シーメンス、アクチエンゲゼルシヤフト Ｍｏｓ電界効果トランジスタ構造、集積回路とその製法

Also Published As

Publication number Publication date
JPH0546097B2 (enrdf_load_stackoverflow) 1993-07-13

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