JPS57178394A - Manufacture of semiconductor light emitting device - Google Patents

Manufacture of semiconductor light emitting device

Info

Publication number
JPS57178394A
JPS57178394A JP6328981A JP6328981A JPS57178394A JP S57178394 A JPS57178394 A JP S57178394A JP 6328981 A JP6328981 A JP 6328981A JP 6328981 A JP6328981 A JP 6328981A JP S57178394 A JPS57178394 A JP S57178394A
Authority
JP
Japan
Prior art keywords
gaas
conduction type
substrate
compound semiconductor
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6328981A
Other languages
English (en)
Inventor
Toshimasa Ishida
Tamao Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP6328981A priority Critical patent/JPS57178394A/ja
Publication of JPS57178394A publication Critical patent/JPS57178394A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223Buried stripe structure
    • H01S5/2232Buried stripe structure with inner confining structure between the active layer and the lower electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP6328981A 1981-04-28 1981-04-28 Manufacture of semiconductor light emitting device Pending JPS57178394A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6328981A JPS57178394A (en) 1981-04-28 1981-04-28 Manufacture of semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6328981A JPS57178394A (en) 1981-04-28 1981-04-28 Manufacture of semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS57178394A true JPS57178394A (en) 1982-11-02

Family

ID=13225010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6328981A Pending JPS57178394A (en) 1981-04-28 1981-04-28 Manufacture of semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS57178394A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031287A (ja) * 1983-07-29 1985-02-18 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5724591A (en) * 1980-07-21 1982-02-09 Sharp Corp Manufacture of semiconductor laser device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5724591A (en) * 1980-07-21 1982-02-09 Sharp Corp Manufacture of semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031287A (ja) * 1983-07-29 1985-02-18 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置

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