JPS57177587A - Laser diode - Google Patents

Laser diode

Info

Publication number
JPS57177587A
JPS57177587A JP56062373A JP6237381A JPS57177587A JP S57177587 A JPS57177587 A JP S57177587A JP 56062373 A JP56062373 A JP 56062373A JP 6237381 A JP6237381 A JP 6237381A JP S57177587 A JPS57177587 A JP S57177587A
Authority
JP
Japan
Prior art keywords
flange
chip
lead
sensor
transparent window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56062373A
Other languages
English (en)
Inventor
Takeo Takahashi
Akira Ishii
Masato Tozawa
Shuichi Shimizu
Atsushi Sasayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Hitachi Iruma Electronic Co Ltd
Original Assignee
Hitachi Ltd
Hitachi Tohbu Semiconductor Ltd
Hitachi Iruma Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Tohbu Semiconductor Ltd, Hitachi Iruma Electronic Co Ltd filed Critical Hitachi Ltd
Priority to JP56062373A priority Critical patent/JPS57177587A/ja
Publication of JPS57177587A publication Critical patent/JPS57177587A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP56062373A 1981-04-27 1981-04-27 Laser diode Pending JPS57177587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56062373A JPS57177587A (en) 1981-04-27 1981-04-27 Laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56062373A JPS57177587A (en) 1981-04-27 1981-04-27 Laser diode

Publications (1)

Publication Number Publication Date
JPS57177587A true JPS57177587A (en) 1982-11-01

Family

ID=13198244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56062373A Pending JPS57177587A (en) 1981-04-27 1981-04-27 Laser diode

Country Status (1)

Country Link
JP (1) JPS57177587A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0183569A2 (en) * 1984-11-30 1986-06-04 Sharp Kabushiki Kaisha A semiconductor laser apparatus
JPH07297493A (ja) * 1994-04-28 1995-11-10 Hamamatsu Photonics Kk 発光装置
JP2018010944A (ja) * 2016-07-12 2018-01-18 住友電気工業株式会社 光モジュール
JPWO2018163513A1 (ja) * 2017-03-06 2020-01-16 住友電気工業株式会社 光モジュール

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0183569A2 (en) * 1984-11-30 1986-06-04 Sharp Kabushiki Kaisha A semiconductor laser apparatus
US4720833A (en) * 1984-11-30 1988-01-19 Sharp Kabushiki Kaisha Semiconductor laser apparatus
JPH07297493A (ja) * 1994-04-28 1995-11-10 Hamamatsu Photonics Kk 発光装置
JP2018010944A (ja) * 2016-07-12 2018-01-18 住友電気工業株式会社 光モジュール
JPWO2018163513A1 (ja) * 2017-03-06 2020-01-16 住友電気工業株式会社 光モジュール

Similar Documents

Publication Publication Date Title
JPS5582475A (en) Photo-coupling semiconductor device
FR2431770A1 (fr) Photodiode avalanche a semi-conducteurs de structure heterogene
EP0386581A3 (en) Device for optically detecting hold position of electronic component
JPS57177587A (en) Laser diode
JPS6428882A (en) Photoelectronic device, manufacture thereof, and lead frame used in same manufacture
JPS5669882A (en) Semiconductor luminous device
JPS5339185A (en) Separately sampling apparatus of blood serum
JPS5768088A (en) Photosemiconductor device
JPS57177588A (en) Laser diode
JPS57141174A (en) Linear light source of light emitting diode
JPS57192954A (en) Surface processing method
JPS6430034A (en) Semiconductor laser driver
JPS55123181A (en) Lead frame for light emitting diode
IT8022046A0 (it) Dispositivo laser a semiconduttore, a singolo filamento di luce dotato di un'area emittente di grandi dimensioni.
JPS55110082A (en) Semiconductor light emitting device
JPS54134992A (en) Semiconductor device
JPS57149949A (en) Raindrop sensor
JPS5636139A (en) Detecting method for substrate of semiconductor device
JPS5587013A (en) Optical detector
JPS57177579A (en) Photosemiconductor device
JPS6469038A (en) Resin-sealed semiconductor device
JPS57121285A (en) Light coupling device
JPS6489280A (en) El device for light source
JPS57169281A (en) Semiconductor device
JPS5556672A (en) Light-coupled semiconductor device