IT8022046A0 - Dispositivo laser a semiconduttore, a singolo filamento di luce dotato di un'area emittente di grandi dimensioni. - Google Patents
Dispositivo laser a semiconduttore, a singolo filamento di luce dotato di un'area emittente di grandi dimensioni.Info
- Publication number
- IT8022046A0 IT8022046A0 IT8022046A IT2204680A IT8022046A0 IT 8022046 A0 IT8022046 A0 IT 8022046A0 IT 8022046 A IT8022046 A IT 8022046A IT 2204680 A IT2204680 A IT 2204680A IT 8022046 A0 IT8022046 A0 IT 8022046A0
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor laser
- laser device
- emitting area
- single filament
- light equipped
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8438779A | 1979-10-12 | 1979-10-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8022046A0 true IT8022046A0 (it) | 1980-05-14 |
IT1193534B IT1193534B (it) | 1988-07-08 |
Family
ID=22184652
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT22046/80A IT1193534B (it) | 1979-10-12 | 1980-05-14 | Dispositivo laser a semiconduttore,a singolo filamento di luce dotato di un'area emittente di grandi dimensioni |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5661190A (it) |
DE (1) | DE3021104A1 (it) |
GB (1) | GB2062949B (it) |
IT (1) | IT1193534B (it) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2129211B (en) * | 1982-10-21 | 1987-01-14 | Rca Corp | Semiconductor laser and a method of making same |
FR2535121B1 (fr) * | 1982-10-25 | 1989-01-06 | Rca Corp | Laser a semi-conducteur et son procede de fabrication |
JPH0732278B2 (ja) * | 1982-10-27 | 1995-04-10 | アールシーエー コーポレーシヨン | 半導体レーザ |
US4523316A (en) * | 1982-10-29 | 1985-06-11 | Rca Corporation | Semiconductor laser with non-absorbing mirror facet |
JPS62188220A (ja) * | 1986-02-13 | 1987-08-17 | Sharp Corp | 液相エピタキシヤル成長方法 |
CN114150367B (zh) * | 2021-11-26 | 2023-07-04 | 华中科技大学 | 一种高温合金单晶缺陷的激光熔覆修复方法及修复系统 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4166253A (en) * | 1977-08-15 | 1979-08-28 | International Business Machines Corporation | Heterostructure diode injection laser having a constricted active region |
IT1121922B (it) * | 1978-07-31 | 1986-04-23 | Rca Corp | Laser a semiconduttore,ad emissione di un singolo raggio di luce |
-
1980
- 1980-04-30 GB GB8014175A patent/GB2062949B/en not_active Expired
- 1980-05-14 IT IT22046/80A patent/IT1193534B/it active
- 1980-06-04 DE DE19803021104 patent/DE3021104A1/de not_active Withdrawn
- 1980-06-11 JP JP7957180A patent/JPS5661190A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE3021104A1 (de) | 1981-04-23 |
IT1193534B (it) | 1988-07-08 |
GB2062949A (en) | 1981-05-28 |
JPS5661190A (en) | 1981-05-26 |
GB2062949B (en) | 1983-08-10 |
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