IT8022046A0 - Dispositivo laser a semiconduttore, a singolo filamento di luce dotato di un'area emittente di grandi dimensioni. - Google Patents

Dispositivo laser a semiconduttore, a singolo filamento di luce dotato di un'area emittente di grandi dimensioni.

Info

Publication number
IT8022046A0
IT8022046A0 IT8022046A IT2204680A IT8022046A0 IT 8022046 A0 IT8022046 A0 IT 8022046A0 IT 8022046 A IT8022046 A IT 8022046A IT 2204680 A IT2204680 A IT 2204680A IT 8022046 A0 IT8022046 A0 IT 8022046A0
Authority
IT
Italy
Prior art keywords
semiconductor laser
laser device
emitting area
single filament
light equipped
Prior art date
Application number
IT8022046A
Other languages
English (en)
Other versions
IT1193534B (it
Inventor
Botez Dan
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT8022046A0 publication Critical patent/IT8022046A0/it
Application granted granted Critical
Publication of IT1193534B publication Critical patent/IT1193534B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT22046/80A 1979-10-12 1980-05-14 Dispositivo laser a semiconduttore,a singolo filamento di luce dotato di un'area emittente di grandi dimensioni IT1193534B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8438779A 1979-10-12 1979-10-12

Publications (2)

Publication Number Publication Date
IT8022046A0 true IT8022046A0 (it) 1980-05-14
IT1193534B IT1193534B (it) 1988-07-08

Family

ID=22184652

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22046/80A IT1193534B (it) 1979-10-12 1980-05-14 Dispositivo laser a semiconduttore,a singolo filamento di luce dotato di un'area emittente di grandi dimensioni

Country Status (4)

Country Link
JP (1) JPS5661190A (it)
DE (1) DE3021104A1 (it)
GB (1) GB2062949B (it)
IT (1) IT1193534B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2129211B (en) * 1982-10-21 1987-01-14 Rca Corp Semiconductor laser and a method of making same
FR2535121B1 (fr) * 1982-10-25 1989-01-06 Rca Corp Laser a semi-conducteur et son procede de fabrication
JPH0732278B2 (ja) * 1982-10-27 1995-04-10 アールシーエー コーポレーシヨン 半導体レーザ
US4523316A (en) * 1982-10-29 1985-06-11 Rca Corporation Semiconductor laser with non-absorbing mirror facet
JPS62188220A (ja) * 1986-02-13 1987-08-17 Sharp Corp 液相エピタキシヤル成長方法
CN114150367B (zh) * 2021-11-26 2023-07-04 华中科技大学 一种高温合金单晶缺陷的激光熔覆修复方法及修复系统

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166253A (en) * 1977-08-15 1979-08-28 International Business Machines Corporation Heterostructure diode injection laser having a constricted active region
IT1121922B (it) * 1978-07-31 1986-04-23 Rca Corp Laser a semiconduttore,ad emissione di un singolo raggio di luce

Also Published As

Publication number Publication date
GB2062949B (en) 1983-08-10
DE3021104A1 (de) 1981-04-23
JPS5661190A (en) 1981-05-26
GB2062949A (en) 1981-05-28
IT1193534B (it) 1988-07-08

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