JPS57176774A - Field effect transistor and manufacture thereof - Google Patents

Field effect transistor and manufacture thereof

Info

Publication number
JPS57176774A
JPS57176774A JP56062095A JP6209581A JPS57176774A JP S57176774 A JPS57176774 A JP S57176774A JP 56062095 A JP56062095 A JP 56062095A JP 6209581 A JP6209581 A JP 6209581A JP S57176774 A JPS57176774 A JP S57176774A
Authority
JP
Japan
Prior art keywords
schottky electrode
ohmic
manufacture
melting point
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56062095A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6336149B2 (enrdf_load_stackoverflow
Inventor
Toshiki Ehata
Kenichi Kikuchi
Hideki Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP56062095A priority Critical patent/JPS57176774A/ja
Publication of JPS57176774A publication Critical patent/JPS57176774A/ja
Publication of JPS6336149B2 publication Critical patent/JPS6336149B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56062095A 1981-04-23 1981-04-23 Field effect transistor and manufacture thereof Granted JPS57176774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56062095A JPS57176774A (en) 1981-04-23 1981-04-23 Field effect transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56062095A JPS57176774A (en) 1981-04-23 1981-04-23 Field effect transistor and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57176774A true JPS57176774A (en) 1982-10-30
JPS6336149B2 JPS6336149B2 (enrdf_load_stackoverflow) 1988-07-19

Family

ID=13190148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56062095A Granted JPS57176774A (en) 1981-04-23 1981-04-23 Field effect transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57176774A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643768A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643768A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same

Also Published As

Publication number Publication date
JPS6336149B2 (enrdf_load_stackoverflow) 1988-07-19

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