JPS57176587A - Semiconductor ram device - Google Patents

Semiconductor ram device

Info

Publication number
JPS57176587A
JPS57176587A JP56061206A JP6120681A JPS57176587A JP S57176587 A JPS57176587 A JP S57176587A JP 56061206 A JP56061206 A JP 56061206A JP 6120681 A JP6120681 A JP 6120681A JP S57176587 A JPS57176587 A JP S57176587A
Authority
JP
Japan
Prior art keywords
same time
write
control signal
turn
inversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56061206A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0315278B2 (fr
Inventor
Yoshito Mimura
Norihiko Sugimoto
Michihiro Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56061206A priority Critical patent/JPS57176587A/ja
Publication of JPS57176587A publication Critical patent/JPS57176587A/ja
Publication of JPH0315278B2 publication Critical patent/JPH0315278B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory

Landscapes

  • Static Random-Access Memory (AREA)
JP56061206A 1981-04-24 1981-04-24 Semiconductor ram device Granted JPS57176587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56061206A JPS57176587A (en) 1981-04-24 1981-04-24 Semiconductor ram device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56061206A JPS57176587A (en) 1981-04-24 1981-04-24 Semiconductor ram device

Publications (2)

Publication Number Publication Date
JPS57176587A true JPS57176587A (en) 1982-10-29
JPH0315278B2 JPH0315278B2 (fr) 1991-02-28

Family

ID=13164477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56061206A Granted JPS57176587A (en) 1981-04-24 1981-04-24 Semiconductor ram device

Country Status (1)

Country Link
JP (1) JPS57176587A (fr)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0143624A2 (fr) * 1983-11-25 1985-06-05 Fujitsu Limited Dispositif de mémoire semi-conductrice dynamique avec des blocs subdivisés de cellules de mémoire
JPS60197995A (ja) * 1984-03-21 1985-10-07 Toshiba Corp スタテイツク型ランダムアクセスメモリ
EP0156896A1 (fr) * 1983-09-27 1985-10-09 Advanced Micro Devices, Inc. Circuit de memoire possedant un controleur d'extraction et de remise a zero de la memoire
JPS61105793A (ja) * 1984-10-26 1986-05-23 Matsushita Electronics Corp メモリ装置
JPS61136396U (fr) * 1985-02-12 1986-08-25
JPS63183681A (ja) * 1987-01-26 1988-07-29 Nec Corp 記憶装置
JPS63228490A (ja) * 1987-03-18 1988-09-22 Sony Corp メモリ装置
US4890263A (en) * 1988-05-31 1989-12-26 Dallas Semiconductor Corporation RAM with capability for rapid clearing of data from memory by simultaneously selecting all row lines
JPH05182499A (ja) * 1991-12-27 1993-07-23 Nec Corp 不揮発性半導体記憶装置
EP0581443A2 (fr) * 1992-07-14 1994-02-02 Aptix Corporation Cellule à mémoire avec état connu après mise sous tension
US5305263A (en) * 1991-06-12 1994-04-19 Micron Technology, Inc. Simplified low power flash write operation
US5402381A (en) * 1991-06-06 1995-03-28 Nec Corporation Semiconductor memory circuit having bit clear and/or register initialize function

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5178939A (fr) * 1974-12-30 1976-07-09 Fujitsu Ltd
JPS5562588A (en) * 1978-10-31 1980-05-12 Matsushita Electric Ind Co Ltd Semiconductor memory circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5178939A (fr) * 1974-12-30 1976-07-09 Fujitsu Ltd
JPS5562588A (en) * 1978-10-31 1980-05-12 Matsushita Electric Ind Co Ltd Semiconductor memory circuit

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0156896A1 (fr) * 1983-09-27 1985-10-09 Advanced Micro Devices, Inc. Circuit de memoire possedant un controleur d'extraction et de remise a zero de la memoire
EP0143624A2 (fr) * 1983-11-25 1985-06-05 Fujitsu Limited Dispositif de mémoire semi-conductrice dynamique avec des blocs subdivisés de cellules de mémoire
US4744061A (en) * 1983-11-25 1988-05-10 Fujitsu Limited Dynamic semiconductor memory device having a simultaneous test function for divided memory cell blocks
JPS60197995A (ja) * 1984-03-21 1985-10-07 Toshiba Corp スタテイツク型ランダムアクセスメモリ
JPS61105793A (ja) * 1984-10-26 1986-05-23 Matsushita Electronics Corp メモリ装置
JPS61136396U (fr) * 1985-02-12 1986-08-25
JPS63183681A (ja) * 1987-01-26 1988-07-29 Nec Corp 記憶装置
JPS63228490A (ja) * 1987-03-18 1988-09-22 Sony Corp メモリ装置
US4890263A (en) * 1988-05-31 1989-12-26 Dallas Semiconductor Corporation RAM with capability for rapid clearing of data from memory by simultaneously selecting all row lines
US5402381A (en) * 1991-06-06 1995-03-28 Nec Corporation Semiconductor memory circuit having bit clear and/or register initialize function
US5305263A (en) * 1991-06-12 1994-04-19 Micron Technology, Inc. Simplified low power flash write operation
JPH05182499A (ja) * 1991-12-27 1993-07-23 Nec Corp 不揮発性半導体記憶装置
EP0581443A2 (fr) * 1992-07-14 1994-02-02 Aptix Corporation Cellule à mémoire avec état connu après mise sous tension
EP0581443A3 (fr) * 1992-07-14 1995-04-19 Aptix Corp Cellule à mémoire avec état connu après mise sous tension.

Also Published As

Publication number Publication date
JPH0315278B2 (fr) 1991-02-28

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