JPS55105898A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS55105898A
JPS55105898A JP1110479A JP1110479A JPS55105898A JP S55105898 A JPS55105898 A JP S55105898A JP 1110479 A JP1110479 A JP 1110479A JP 1110479 A JP1110479 A JP 1110479A JP S55105898 A JPS55105898 A JP S55105898A
Authority
JP
Japan
Prior art keywords
word line
decoder
relief
array
defective bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1110479A
Other languages
Japanese (ja)
Inventor
Hideo Yoshino
Mamoru Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1110479A priority Critical patent/JPS55105898A/en
Publication of JPS55105898A publication Critical patent/JPS55105898A/en
Pending legal-status Critical Current

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE: To secure the relief for the defective bit without an extreme increment of the area or the lowering of the operation speed, by incorporating the relief circuit for defective bit within the decoder which decodes the input address.
CONSTITUTION: When the function test is given to cell array 21 after completion of the IC memory, addresses A0WAn are supplied to word line selection decoder 23. In this case, for word line switch circuit 25, the conduction is secured for the word line connecting to array 21 from decoder 23. Thus the defective bit within array 21 can be identified. However, no selection is always given to the word line connecting to relief cell array 22 from relief decoder 24. After execution of such function test, the connection to decoder 23 is cut off by circuit 25 for the specified word line. Otherwise the connection is given only to the word line containing no defective bit. In addition, for the connection within decoder 24, the selection is secured for the word line containing array 22.
COPYRIGHT: (C)1980,JPO&Japio
JP1110479A 1979-02-02 1979-02-02 Semiconductor memory device Pending JPS55105898A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1110479A JPS55105898A (en) 1979-02-02 1979-02-02 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1110479A JPS55105898A (en) 1979-02-02 1979-02-02 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS55105898A true JPS55105898A (en) 1980-08-13

Family

ID=11768695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1110479A Pending JPS55105898A (en) 1979-02-02 1979-02-02 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS55105898A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130298A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor integrated circuit memory and relieving method for its fault
JPS59151399A (en) * 1983-02-17 1984-08-29 Mitsubishi Electric Corp Semiconductor storage device
JPS59185099A (en) * 1984-02-28 1984-10-20 Toshiba Corp Nonvolatile semiconductor memory

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130298A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor integrated circuit memory and relieving method for its fault
JPS6135637B2 (en) * 1981-02-06 1986-08-14 Hitachi Ltd
JPS59151399A (en) * 1983-02-17 1984-08-29 Mitsubishi Electric Corp Semiconductor storage device
JPH0463479B2 (en) * 1983-02-17 1992-10-09 Mitsubishi Electric Corp
JPS59185099A (en) * 1984-02-28 1984-10-20 Toshiba Corp Nonvolatile semiconductor memory
JPS6240797B2 (en) * 1984-02-28 1987-08-31 Tokyo Shibaura Electric Co

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