JPS57105891A - Rewritable non-volatile semiconductor storage device - Google Patents

Rewritable non-volatile semiconductor storage device

Info

Publication number
JPS57105891A
JPS57105891A JP55182289A JP18228980A JPS57105891A JP S57105891 A JPS57105891 A JP S57105891A JP 55182289 A JP55182289 A JP 55182289A JP 18228980 A JP18228980 A JP 18228980A JP S57105891 A JPS57105891 A JP S57105891A
Authority
JP
Japan
Prior art keywords
test
semiconductor storage
volatile semiconductor
taken
same time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55182289A
Other languages
Japanese (ja)
Other versions
JPS6161480B2 (en
Inventor
Masanobu Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55182289A priority Critical patent/JPS57105891A/en
Priority to DE8181306062T priority patent/DE3176810D1/en
Priority to EP81306062A priority patent/EP0055594B1/en
Priority to IE3036/81A priority patent/IE54406B1/en
Priority to US06/333,926 priority patent/US4543647A/en
Publication of JPS57105891A publication Critical patent/JPS57105891A/en
Publication of JPS6161480B2 publication Critical patent/JPS6161480B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30—Accessing single arrays
    • G11C29/34—Accessing multiple bits simultaneously

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

PURPOSE:To enable to reduce a test write-in time, by providing three additional circuits, in a non-volatile semiconductor storage device rewritable electrically. CONSTITUTION:In a non-volatile semiconductor storage state, selected word lines WLn and bit line BLM are taken at high potential, information 0 is written in a cell MCA at the cross point, the word line is taken as high potential and the bit line is taken at low potential, and information 1 is written in a cell at the cross point. An additional circuit Z1 makes all the word lines WL0-WL255 to the selected level (high potential) at the same time at test. An additional circuit Z2 makes output lines C0-C31 of a column decoder CD to the selected level at the same time at test. An additional circuit Z3 makes all the word lines to a non- selection level Vss at the same time at test. The output of a row decoder RD and the output of a column decoder CD are at selection level by only one.
JP55182289A 1980-12-23 1980-12-23 Rewritable non-volatile semiconductor storage device Granted JPS57105891A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP55182289A JPS57105891A (en) 1980-12-23 1980-12-23 Rewritable non-volatile semiconductor storage device
DE8181306062T DE3176810D1 (en) 1980-12-23 1981-12-22 Electrically programmable non-volatile semiconductor memory device
EP81306062A EP0055594B1 (en) 1980-12-23 1981-12-22 Electrically programmable non-volatile semiconductor memory device
IE3036/81A IE54406B1 (en) 1980-12-23 1981-12-22 Electrically programmable non-colatile semiconductor memory device
US06/333,926 US4543647A (en) 1980-12-23 1981-12-23 Electrically programmable non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55182289A JPS57105891A (en) 1980-12-23 1980-12-23 Rewritable non-volatile semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS57105891A true JPS57105891A (en) 1982-07-01
JPS6161480B2 JPS6161480B2 (en) 1986-12-25

Family

ID=16115672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55182289A Granted JPS57105891A (en) 1980-12-23 1980-12-23 Rewritable non-volatile semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS57105891A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172598A (en) * 1981-04-17 1982-10-23 Toshiba Corp Nonvolatile semiconductor memory
JPS59107493A (en) * 1982-12-09 1984-06-21 Ricoh Co Ltd Eprom memory device with test circuit
JPS60193056A (en) * 1984-03-14 1985-10-01 Nec Corp Single chip microcomputer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172598A (en) * 1981-04-17 1982-10-23 Toshiba Corp Nonvolatile semiconductor memory
JPH0350360B2 (en) * 1981-04-17 1991-08-01 Tokyo Shibaura Electric Co
JPS59107493A (en) * 1982-12-09 1984-06-21 Ricoh Co Ltd Eprom memory device with test circuit
JPS60193056A (en) * 1984-03-14 1985-10-01 Nec Corp Single chip microcomputer

Also Published As

Publication number Publication date
JPS6161480B2 (en) 1986-12-25

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