JPS6439699A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS6439699A
JPS6439699A JP62194477A JP19447787A JPS6439699A JP S6439699 A JPS6439699 A JP S6439699A JP 62194477 A JP62194477 A JP 62194477A JP 19447787 A JP19447787 A JP 19447787A JP S6439699 A JPS6439699 A JP S6439699A
Authority
JP
Japan
Prior art keywords
write
matrices
memory
signal
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62194477A
Other languages
Japanese (ja)
Inventor
Norio Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62194477A priority Critical patent/JPS6439699A/en
Publication of JPS6439699A publication Critical patent/JPS6439699A/en
Pending legal-status Critical Current

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE:To offer a fault tolerant memory device and to realize high reliability, miniaturization, and low cost, by arranging plural memory matrices on a semiconductor chip, and outputting is output via a logic circuit such as a majority circuit, etc. CONSTITUTION:In the memory matrices 1, 2, and 3, a large number of memory cells are arranged regularly, and an address signal An is connected to respective memory matrices. A chip select signal, the inverse of CS with selects the memory device and a write signal, the inverse of WR which controls write are prepared, and write control via a logic gate 4 and readout control via a logic gate 5 are performed. The write of the data on the matrices 1, 2, and 3 are performed commonly by a data entry Din, and read out results are inputted to a logic circuit 6, respectively, and after arithmetic operations are applied on them, they are outputted via a buffer 7. The arithmetic operation is performed by a method of majority of the one where an error signal is outputted even when one error is generated. Thus, the miniaturization and the reliability of the device can be obtained.
JP62194477A 1987-08-05 1987-08-05 Semiconductor memory device Pending JPS6439699A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62194477A JPS6439699A (en) 1987-08-05 1987-08-05 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62194477A JPS6439699A (en) 1987-08-05 1987-08-05 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS6439699A true JPS6439699A (en) 1989-02-09

Family

ID=16325196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62194477A Pending JPS6439699A (en) 1987-08-05 1987-08-05 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6439699A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04318399A (en) * 1991-04-17 1992-11-09 Nec Ic Microcomput Syst Ltd Semiconductor memory device
JP2008186515A (en) * 2007-01-30 2008-08-14 Sharp Corp Semiconductor memory and electronic equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04318399A (en) * 1991-04-17 1992-11-09 Nec Ic Microcomput Syst Ltd Semiconductor memory device
JP2008186515A (en) * 2007-01-30 2008-08-14 Sharp Corp Semiconductor memory and electronic equipment

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