HK23192A - Integrated semiconductor memory - Google Patents
Integrated semiconductor memoryInfo
- Publication number
- HK23192A HK23192A HK231/92A HK23192A HK23192A HK 23192 A HK23192 A HK 23192A HK 231/92 A HK231/92 A HK 231/92A HK 23192 A HK23192 A HK 23192A HK 23192 A HK23192 A HK 23192A
- Authority
- HK
- Hong Kong
- Prior art keywords
- data
- memory
- separators
- response
- output terminals
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/26—Accessing multiple arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
Landscapes
- Tests Of Electronic Circuits (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Test And Diagnosis Of Digital Computers (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Integrated semiconductor memory includes n identical memory cell fields, each having a data width equal to m, n . m data lines for writing-in and reading-out memory data into and out of the memory cell fields, m first data separators each having an assigned data input terminal for applying the memory data as a function of addressing data when written-in, m second data separators for selecting one of the n data lines in response to the addressing data when reading out the memory data and for applying the memory data to the outputs of the second data separators, data output terminals for receiving the memory data, evaluation circuits connected to data lines for feeding data to the data output terminals in response to a control signal for activating an error signal to the data output terminals upon the occurrence of faulty memory data, third data separators for transferring the memory data in parallel to all of the n data lines in response to the control signal, and fourth data separators for selectively feeding either the memory data selected by the second data separators or the output signal generated by the evaluation circuit to the data output terminals in response to the control signal.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3447762 | 1984-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK23192A true HK23192A (en) | 1992-04-03 |
Family
ID=6254082
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK231/92A HK23192A (en) | 1984-12-28 | 1992-03-26 | Integrated semiconductor memory |
Country Status (6)
Country | Link |
---|---|
US (1) | US4742490A (en) |
EP (1) | EP0186040B1 (en) |
JP (1) | JP2598383B2 (en) |
AT (1) | ATE51316T1 (en) |
DE (1) | DE3576755D1 (en) |
HK (1) | HK23192A (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE65339T1 (en) * | 1984-12-28 | 1991-08-15 | Siemens Ag | INTEGRATED SEMICONDUCTOR MEMORY. |
JPS62170094A (en) * | 1986-01-21 | 1987-07-27 | Mitsubishi Electric Corp | Semiconductor storage circuit |
FR2607956A1 (en) * | 1986-12-05 | 1988-06-10 | Eurotechnique Sa | Method of testing integrated memories and memories for implementing the method |
JPS63244400A (en) * | 1987-03-16 | 1988-10-11 | シーメンス・アクチエンゲゼルシヤフト | Inspection circuit apparatus and method for memory cell |
JP2659095B2 (en) * | 1987-06-30 | 1997-09-30 | 富士通株式会社 | Semiconductor integrated circuit device having gate array and memory |
ATE87753T1 (en) * | 1988-02-10 | 1993-04-15 | Siemens Ag | REDUNDANCY DECODER OF AN INTEGRATED SEMICONDUCTOR MEMORY. |
ATE125386T1 (en) * | 1989-05-31 | 1995-08-15 | Siemens Ag | METHOD AND DEVICE FOR INTERNAL PARALLEL TESTING OF SEMICONDUCTOR MEMORY. |
ATE104465T1 (en) * | 1990-05-10 | 1994-04-15 | Siemens Ag | INTEGRATED SEMICONDUCTOR MEMORY WITH PARALLEL TEST OPTION AND REDUNDANCY METHOD. |
JP3084759B2 (en) * | 1991-01-29 | 2000-09-04 | 日本電気株式会社 | Dynamic random access memory device |
DE19607724A1 (en) * | 1996-02-29 | 1997-09-04 | Siemens Ag | Circuit arrangement for a programmable non-volatile memory |
DE10226585C1 (en) * | 2002-06-14 | 2003-12-11 | Infineon Technologies Ag | Random-access memory circuit with in-built testing aid for rapid parallel testing of all memory banks |
DE10232178B3 (en) | 2002-07-16 | 2004-02-26 | Infineon Technologies Ag | Checking device for address generator for testing device within IC, such as semiconductor memory IC, using storage of values of address signals provided by address generator |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51147924A (en) * | 1975-06-13 | 1976-12-18 | Fujitsu Ltd | Memory unit |
JPS573298A (en) * | 1980-06-06 | 1982-01-08 | Nec Corp | Memory integrated circuit |
US4495603A (en) * | 1980-07-31 | 1985-01-22 | Varshney Ramesh C | Test system for segmented memory |
DE3030852A1 (en) * | 1980-08-14 | 1982-03-11 | Siemens AG, 1000 Berlin und 8000 München | CIRCUIT ARRANGEMENT FOR THE TESTING OF STORAGE CELLS PROGRAMMABLE MOS-INTEGRATED SEMICONDUCTOR MEMORY |
JPS57179997A (en) * | 1981-04-25 | 1982-11-05 | Toshiba Corp | Semiconductor memory |
US4541090A (en) * | 1981-06-09 | 1985-09-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device |
JPS57203298A (en) * | 1981-06-09 | 1982-12-13 | Matsushita Electric Ind Co Ltd | Semiconductor storage device |
JPS57208697A (en) * | 1981-06-16 | 1982-12-21 | Matsushita Electric Ind Co Ltd | Semiconductor storage device |
JPS59119597A (en) * | 1982-12-27 | 1984-07-10 | Fujitsu Ltd | Semiconductor storage device |
DE3318564A1 (en) * | 1983-05-20 | 1984-11-22 | Siemens AG, 1000 Berlin und 8000 München | INTEGRATED DIGITAL MOS SEMICONDUCTOR CIRCUIT |
JPS60115099A (en) * | 1983-11-25 | 1985-06-21 | Fujitsu Ltd | Semiconductor storage device |
-
1985
- 1985-12-10 DE DE8585115739T patent/DE3576755D1/en not_active Expired - Lifetime
- 1985-12-10 EP EP85115739A patent/EP0186040B1/en not_active Expired - Lifetime
- 1985-12-10 AT AT85115739T patent/ATE51316T1/en not_active IP Right Cessation
- 1985-12-20 US US06/811,932 patent/US4742490A/en not_active Expired - Lifetime
- 1985-12-27 JP JP60299598A patent/JP2598383B2/en not_active Expired - Lifetime
-
1992
- 1992-03-26 HK HK231/92A patent/HK23192A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPS61158099A (en) | 1986-07-17 |
US4742490A (en) | 1988-05-03 |
EP0186040A1 (en) | 1986-07-02 |
JP2598383B2 (en) | 1997-04-09 |
DE3576755D1 (en) | 1990-04-26 |
EP0186040B1 (en) | 1990-03-21 |
ATE51316T1 (en) | 1990-04-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |