JPS57172764A - Manufacture of semiconductor element - Google Patents
Manufacture of semiconductor elementInfo
- Publication number
- JPS57172764A JPS57172764A JP56057001A JP5700181A JPS57172764A JP S57172764 A JPS57172764 A JP S57172764A JP 56057001 A JP56057001 A JP 56057001A JP 5700181 A JP5700181 A JP 5700181A JP S57172764 A JPS57172764 A JP S57172764A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- contact layer
- mask
- lead out
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56057001A JPS57172764A (en) | 1981-04-17 | 1981-04-17 | Manufacture of semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56057001A JPS57172764A (en) | 1981-04-17 | 1981-04-17 | Manufacture of semiconductor element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57172764A true JPS57172764A (en) | 1982-10-23 |
JPH0123951B2 JPH0123951B2 (enrdf_load_stackoverflow) | 1989-05-09 |
Family
ID=13043235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56057001A Granted JPS57172764A (en) | 1981-04-17 | 1981-04-17 | Manufacture of semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57172764A (enrdf_load_stackoverflow) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59149055A (ja) * | 1983-02-12 | 1984-08-25 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | バイポ−ラプレ−ナトランジスタの製造方法 |
JPS6057667A (ja) * | 1983-09-08 | 1985-04-03 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS60119775A (ja) * | 1983-12-02 | 1985-06-27 | Hitachi Ltd | 半導体装置の製造方法 |
JPS60145659A (ja) * | 1984-01-10 | 1985-08-01 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
JPS63182860A (ja) * | 1987-01-26 | 1988-07-28 | Toshiba Corp | 半導体装置とその製造方法 |
-
1981
- 1981-04-17 JP JP56057001A patent/JPS57172764A/ja active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59149055A (ja) * | 1983-02-12 | 1984-08-25 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | バイポ−ラプレ−ナトランジスタの製造方法 |
JPS6057667A (ja) * | 1983-09-08 | 1985-04-03 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS60119775A (ja) * | 1983-12-02 | 1985-06-27 | Hitachi Ltd | 半導体装置の製造方法 |
JPS60145659A (ja) * | 1984-01-10 | 1985-08-01 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
JPS63182860A (ja) * | 1987-01-26 | 1988-07-28 | Toshiba Corp | 半導体装置とその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0123951B2 (enrdf_load_stackoverflow) | 1989-05-09 |
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