JPH0123951B2 - - Google Patents
Info
- Publication number
- JPH0123951B2 JPH0123951B2 JP56057001A JP5700181A JPH0123951B2 JP H0123951 B2 JPH0123951 B2 JP H0123951B2 JP 56057001 A JP56057001 A JP 56057001A JP 5700181 A JP5700181 A JP 5700181A JP H0123951 B2 JPH0123951 B2 JP H0123951B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- forming
- oxide film
- silicon oxide
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 238000005468 ion implantation Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 39
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000009740 moulding (composite fabrication) Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000007796 conventional method Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56057001A JPS57172764A (en) | 1981-04-17 | 1981-04-17 | Manufacture of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56057001A JPS57172764A (en) | 1981-04-17 | 1981-04-17 | Manufacture of semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57172764A JPS57172764A (en) | 1982-10-23 |
| JPH0123951B2 true JPH0123951B2 (enrdf_load_stackoverflow) | 1989-05-09 |
Family
ID=13043235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56057001A Granted JPS57172764A (en) | 1981-04-17 | 1981-04-17 | Manufacture of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57172764A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3368344D1 (en) * | 1983-02-12 | 1987-01-22 | Itt Ind Gmbh Deutsche | Method of making bipolar planar transistors |
| JPS6057667A (ja) * | 1983-09-08 | 1985-04-03 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS60119775A (ja) * | 1983-12-02 | 1985-06-27 | Hitachi Ltd | 半導体装置の製造方法 |
| JPS60145659A (ja) * | 1984-01-10 | 1985-08-01 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
| JPS63182860A (ja) * | 1987-01-26 | 1988-07-28 | Toshiba Corp | 半導体装置とその製造方法 |
-
1981
- 1981-04-17 JP JP56057001A patent/JPS57172764A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57172764A (en) | 1982-10-23 |
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