JPS5717170A - Epitaxial type transistor and manufacture thereof - Google Patents

Epitaxial type transistor and manufacture thereof

Info

Publication number
JPS5717170A
JPS5717170A JP9184880A JP9184880A JPS5717170A JP S5717170 A JPS5717170 A JP S5717170A JP 9184880 A JP9184880 A JP 9184880A JP 9184880 A JP9184880 A JP 9184880A JP S5717170 A JPS5717170 A JP S5717170A
Authority
JP
Japan
Prior art keywords
region
epitaxial layer
type
epitaxial
extremely low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9184880A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6360552B2 (enrdf_load_html_response
Inventor
Chukei Kaneko
Yuichiro Takayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP9184880A priority Critical patent/JPS5717170A/ja
Publication of JPS5717170A publication Critical patent/JPS5717170A/ja
Publication of JPS6360552B2 publication Critical patent/JPS6360552B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP9184880A 1980-07-04 1980-07-04 Epitaxial type transistor and manufacture thereof Granted JPS5717170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9184880A JPS5717170A (en) 1980-07-04 1980-07-04 Epitaxial type transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9184880A JPS5717170A (en) 1980-07-04 1980-07-04 Epitaxial type transistor and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5717170A true JPS5717170A (en) 1982-01-28
JPS6360552B2 JPS6360552B2 (enrdf_load_html_response) 1988-11-24

Family

ID=14037985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9184880A Granted JPS5717170A (en) 1980-07-04 1980-07-04 Epitaxial type transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5717170A (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6056701U (ja) * 1983-09-27 1985-04-20 株式会社アシックス ソツクス

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119313A (en) * 1974-08-08 1976-02-16 Takawaki Kiso Koji Kk Kisokojokuitono oshikomihoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119313A (en) * 1974-08-08 1976-02-16 Takawaki Kiso Koji Kk Kisokojokuitono oshikomihoho

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6056701U (ja) * 1983-09-27 1985-04-20 株式会社アシックス ソツクス

Also Published As

Publication number Publication date
JPS6360552B2 (enrdf_load_html_response) 1988-11-24

Similar Documents

Publication Publication Date Title
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS5691478A (en) Manufacture of punch-through type diode
HK30789A (en) Process for manufacturing a semiconductor integrated circuit device
JPS5717170A (en) Epitaxial type transistor and manufacture thereof
JPS5676568A (en) Manufacture of thyristor
JPS5778171A (en) Thyristor
JPS5220769A (en) Longitudinal semi-conductor unit
JPS56158477A (en) Manufacture of gate turn off thyristor
JPS538574A (en) Lateral thyristor
JPS6482566A (en) Field-effect semiconductor device
JPS57184250A (en) Field-effect type semiconductor circuit element
JPS55151365A (en) Insulated gate type transistor and semiconductor integrated circuit
JPS5673461A (en) Semiconductor device
JPS5353988A (en) Semiconductor integrated circuit
JPS57208175A (en) Semiconductor device
JPS5726462A (en) Semiconductor device
JPS55120176A (en) Variable capacitance diode with plural electrode structures
JPS577158A (en) Semiconductor device
JPS5678164A (en) Manufacture of semiconductor element
JPS5536976A (en) Production of semiconductor device
JPS55121679A (en) Short channel v-mos-fet
JPS56153773A (en) Semiconductor integrated circuit device
JPS57124470A (en) Semiconductor device
JPS53109484A (en) Semiconductor device
JPS5676567A (en) Manufacture of thyristor