JPS5717145A - Semiconductor device and manufacture therefor - Google Patents

Semiconductor device and manufacture therefor

Info

Publication number
JPS5717145A
JPS5717145A JP9186180A JP9186180A JPS5717145A JP S5717145 A JPS5717145 A JP S5717145A JP 9186180 A JP9186180 A JP 9186180A JP 9186180 A JP9186180 A JP 9186180A JP S5717145 A JPS5717145 A JP S5717145A
Authority
JP
Japan
Prior art keywords
groove
film
vertical
substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9186180A
Other languages
English (en)
Other versions
JPS6217861B2 (ja
Inventor
Junji Sakurai
Hajime Kamioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9186180A priority Critical patent/JPS5717145A/ja
Publication of JPS5717145A publication Critical patent/JPS5717145A/ja
Publication of JPS6217861B2 publication Critical patent/JPS6217861B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP9186180A 1980-07-04 1980-07-04 Semiconductor device and manufacture therefor Granted JPS5717145A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9186180A JPS5717145A (en) 1980-07-04 1980-07-04 Semiconductor device and manufacture therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9186180A JPS5717145A (en) 1980-07-04 1980-07-04 Semiconductor device and manufacture therefor

Publications (2)

Publication Number Publication Date
JPS5717145A true JPS5717145A (en) 1982-01-28
JPS6217861B2 JPS6217861B2 (ja) 1987-04-20

Family

ID=14038328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9186180A Granted JPS5717145A (en) 1980-07-04 1980-07-04 Semiconductor device and manufacture therefor

Country Status (1)

Country Link
JP (1) JPS5717145A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045039A (ja) * 1983-08-23 1985-03-11 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPS60174738U (ja) * 1984-04-27 1985-11-19 ナショナル住宅産業株式会社 幕板の取付構造
JPS61248459A (ja) * 1985-04-25 1986-11-05 Nippon Telegr & Teleph Corp <Ntt> 相補形ｍｉｓ半導体集積回路
US6218720B1 (en) * 1998-10-21 2001-04-17 Advanced Micro Devices, Inc. Semiconductor topography employing a nitrogenated shallow trench isolation structure
FR2800515A1 (fr) * 1999-11-03 2001-05-04 St Microelectronics Sa Procede de fabrication de composants de puissance verticaux
CN107170798A (zh) * 2017-03-29 2017-09-15 西安电子科技大学 基于栅场板和漏场板的垂直型功率器件及其制作方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045039A (ja) * 1983-08-23 1985-03-11 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPS60174738U (ja) * 1984-04-27 1985-11-19 ナショナル住宅産業株式会社 幕板の取付構造
JPH0314500Y2 (ja) * 1984-04-27 1991-03-29
JPS61248459A (ja) * 1985-04-25 1986-11-05 Nippon Telegr & Teleph Corp <Ntt> 相補形ｍｉｓ半導体集積回路
US6218720B1 (en) * 1998-10-21 2001-04-17 Advanced Micro Devices, Inc. Semiconductor topography employing a nitrogenated shallow trench isolation structure
FR2800515A1 (fr) * 1999-11-03 2001-05-04 St Microelectronics Sa Procede de fabrication de composants de puissance verticaux
EP1098364A1 (fr) * 1999-11-03 2001-05-09 STMicroelectronics S.A. Procédé de fabrication de composants de puissance verticaux
US6551868B1 (en) 1999-11-03 2003-04-22 Stmicroelectronics S.A. Vertical power component manufacturing method
US6903435B2 (en) 1999-11-03 2005-06-07 Stmicroelectronics S.A. Vertical power component
CN107170798A (zh) * 2017-03-29 2017-09-15 西安电子科技大学 基于栅场板和漏场板的垂直型功率器件及其制作方法
CN107170798B (zh) * 2017-03-29 2020-04-14 西安电子科技大学 基于栅场板和漏场板的垂直型功率器件及其制作方法

Also Published As

Publication number Publication date
JPS6217861B2 (ja) 1987-04-20

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