JPS57170814A - Formation of metallic silicide layer with high melting point - Google Patents
Formation of metallic silicide layer with high melting pointInfo
- Publication number
- JPS57170814A JPS57170814A JP3638381A JP3638381A JPS57170814A JP S57170814 A JPS57170814 A JP S57170814A JP 3638381 A JP3638381 A JP 3638381A JP 3638381 A JP3638381 A JP 3638381A JP S57170814 A JPS57170814 A JP S57170814A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- polycrystalline
- film
- silicide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Silicon Compounds (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3638381A JPS57170814A (en) | 1981-03-13 | 1981-03-13 | Formation of metallic silicide layer with high melting point |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3638381A JPS57170814A (en) | 1981-03-13 | 1981-03-13 | Formation of metallic silicide layer with high melting point |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57170814A true JPS57170814A (en) | 1982-10-21 |
JPS6138264B2 JPS6138264B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-08-28 |
Family
ID=12468316
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3638381A Granted JPS57170814A (en) | 1981-03-13 | 1981-03-13 | Formation of metallic silicide layer with high melting point |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57170814A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5993871A (ja) * | 1982-11-16 | 1984-05-30 | Matsushita Electronics Corp | 高融点金属シリサイド膜の形成方法 |
JPH02224225A (ja) * | 1988-11-28 | 1990-09-06 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH04293763A (ja) * | 1991-03-19 | 1992-10-19 | Sanyo Electric Co Ltd | シリサイド膜の製造方法 |
-
1981
- 1981-03-13 JP JP3638381A patent/JPS57170814A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5993871A (ja) * | 1982-11-16 | 1984-05-30 | Matsushita Electronics Corp | 高融点金属シリサイド膜の形成方法 |
JPH02224225A (ja) * | 1988-11-28 | 1990-09-06 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH04293763A (ja) * | 1991-03-19 | 1992-10-19 | Sanyo Electric Co Ltd | シリサイド膜の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6138264B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-08-28 |
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