JPS57170814A - Formation of metallic silicide layer with high melting point - Google Patents

Formation of metallic silicide layer with high melting point

Info

Publication number
JPS57170814A
JPS57170814A JP3638381A JP3638381A JPS57170814A JP S57170814 A JPS57170814 A JP S57170814A JP 3638381 A JP3638381 A JP 3638381A JP 3638381 A JP3638381 A JP 3638381A JP S57170814 A JPS57170814 A JP S57170814A
Authority
JP
Japan
Prior art keywords
layer
substrate
polycrystalline
film
silicide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3638381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6138264B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Minoru Inoue
Yasuhisa Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3638381A priority Critical patent/JPS57170814A/ja
Publication of JPS57170814A publication Critical patent/JPS57170814A/ja
Publication of JPS6138264B2 publication Critical patent/JPS6138264B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
JP3638381A 1981-03-13 1981-03-13 Formation of metallic silicide layer with high melting point Granted JPS57170814A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3638381A JPS57170814A (en) 1981-03-13 1981-03-13 Formation of metallic silicide layer with high melting point

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3638381A JPS57170814A (en) 1981-03-13 1981-03-13 Formation of metallic silicide layer with high melting point

Publications (2)

Publication Number Publication Date
JPS57170814A true JPS57170814A (en) 1982-10-21
JPS6138264B2 JPS6138264B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-08-28

Family

ID=12468316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3638381A Granted JPS57170814A (en) 1981-03-13 1981-03-13 Formation of metallic silicide layer with high melting point

Country Status (1)

Country Link
JP (1) JPS57170814A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5993871A (ja) * 1982-11-16 1984-05-30 Matsushita Electronics Corp 高融点金属シリサイド膜の形成方法
JPH02224225A (ja) * 1988-11-28 1990-09-06 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPH04293763A (ja) * 1991-03-19 1992-10-19 Sanyo Electric Co Ltd シリサイド膜の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5993871A (ja) * 1982-11-16 1984-05-30 Matsushita Electronics Corp 高融点金属シリサイド膜の形成方法
JPH02224225A (ja) * 1988-11-28 1990-09-06 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPH04293763A (ja) * 1991-03-19 1992-10-19 Sanyo Electric Co Ltd シリサイド膜の製造方法

Also Published As

Publication number Publication date
JPS6138264B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-08-28

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