JPS57170530A - Manufacture of x-ray exposure mask - Google Patents

Manufacture of x-ray exposure mask

Info

Publication number
JPS57170530A
JPS57170530A JP5532181A JP5532181A JPS57170530A JP S57170530 A JPS57170530 A JP S57170530A JP 5532181 A JP5532181 A JP 5532181A JP 5532181 A JP5532181 A JP 5532181A JP S57170530 A JPS57170530 A JP S57170530A
Authority
JP
Japan
Prior art keywords
pattern
layer
ray absorbing
substrate
auxiliary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5532181A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0247848B2 (enExample
Inventor
Hisanao Tsuge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5532181A priority Critical patent/JPS57170530A/ja
Publication of JPS57170530A publication Critical patent/JPS57170530A/ja
Publication of JPH0247848B2 publication Critical patent/JPH0247848B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP5532181A 1981-04-13 1981-04-13 Manufacture of x-ray exposure mask Granted JPS57170530A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5532181A JPS57170530A (en) 1981-04-13 1981-04-13 Manufacture of x-ray exposure mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5532181A JPS57170530A (en) 1981-04-13 1981-04-13 Manufacture of x-ray exposure mask

Publications (2)

Publication Number Publication Date
JPS57170530A true JPS57170530A (en) 1982-10-20
JPH0247848B2 JPH0247848B2 (enExample) 1990-10-23

Family

ID=12995278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5532181A Granted JPS57170530A (en) 1981-04-13 1981-04-13 Manufacture of x-ray exposure mask

Country Status (1)

Country Link
JP (1) JPS57170530A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63155618A (ja) * 1986-12-19 1988-06-28 Hitachi Ltd Ｘ線露光用マスクの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63155618A (ja) * 1986-12-19 1988-06-28 Hitachi Ltd Ｘ線露光用マスクの製造方法

Also Published As

Publication number Publication date
JPH0247848B2 (enExample) 1990-10-23

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