JPS57166077A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS57166077A JPS57166077A JP56052727A JP5272781A JPS57166077A JP S57166077 A JPS57166077 A JP S57166077A JP 56052727 A JP56052727 A JP 56052727A JP 5272781 A JP5272781 A JP 5272781A JP S57166077 A JPS57166077 A JP S57166077A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- substrate
- maximized
- minimized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56052727A JPS57166077A (en) | 1981-04-07 | 1981-04-07 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56052727A JPS57166077A (en) | 1981-04-07 | 1981-04-07 | Semiconductor device and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57166077A true JPS57166077A (en) | 1982-10-13 |
| JPH0556026B2 JPH0556026B2 (enExample) | 1993-08-18 |
Family
ID=12922948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56052727A Granted JPS57166077A (en) | 1981-04-07 | 1981-04-07 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57166077A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5832466A (ja) * | 1981-08-20 | 1983-02-25 | Sanyo Electric Co Ltd | Mosfetの製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5591871A (en) * | 1978-12-29 | 1980-07-11 | Nec Corp | Manufacture of semiconductor device |
| JPS5591873A (en) * | 1978-12-29 | 1980-07-11 | Nec Corp | Manufacture of semiconductor device |
| JPS5748268A (en) * | 1980-09-05 | 1982-03-19 | Hitachi Ltd | Manufacture of mos semiconductor device |
-
1981
- 1981-04-07 JP JP56052727A patent/JPS57166077A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5591871A (en) * | 1978-12-29 | 1980-07-11 | Nec Corp | Manufacture of semiconductor device |
| JPS5591873A (en) * | 1978-12-29 | 1980-07-11 | Nec Corp | Manufacture of semiconductor device |
| JPS5748268A (en) * | 1980-09-05 | 1982-03-19 | Hitachi Ltd | Manufacture of mos semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5832466A (ja) * | 1981-08-20 | 1983-02-25 | Sanyo Electric Co Ltd | Mosfetの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0556026B2 (enExample) | 1993-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4349395A (en) | Method for producing MOS semiconductor device | |
| JPS6435959A (en) | Thin film transistor | |
| JPS57166077A (en) | Semiconductor device and manufacture thereof | |
| JPS57192063A (en) | Manufacture of semiconductor device | |
| JPS56155531A (en) | Manufacture of semiconductor device | |
| JPS5776877A (en) | Semiconductor memory device and manufacture thereof | |
| JPS57172770A (en) | Insulating gate type field effect transistor | |
| JPS57100768A (en) | Manufacture of field effect semiconductor device | |
| JPS5585073A (en) | Manufacture of insulation gate type electric field effect transistor | |
| JPS5713769A (en) | Semiconductor device and manufacture thereof | |
| JPS57188866A (en) | Manufacture of semiconductor device | |
| JPS57111060A (en) | Manufacture of semiconductor device | |
| JPS57120371A (en) | Manufacture of complementary type mos semiconductor | |
| JPS5736863A (en) | Manufacture of semiconductor device | |
| JPS5658266A (en) | Production of mos type transistor | |
| JPS57104259A (en) | Metal oxide semiconductor device | |
| JPS5617026A (en) | Manufacture of semiconductor device | |
| JPS56157066A (en) | Manufacture of semiconductor device | |
| JPS57134970A (en) | Manufacture of thin film transistor | |
| JPS57193063A (en) | Manufacture of semiconductor device | |
| JPS57172758A (en) | Manufacture of semiconductor device | |
| JPS57202783A (en) | Manufacture of insulated gate type field-effect transistor | |
| JPS5613771A (en) | Metal-oxide semiconductor device | |
| JPS5654069A (en) | High withstand voltage mos field-effect semiconductor device | |
| JPS6417475A (en) | Manufacture of mos semiconductor device |