JPS57159071A - Compound semiconductor device - Google Patents

Compound semiconductor device

Info

Publication number
JPS57159071A
JPS57159071A JP56043189A JP4318981A JPS57159071A JP S57159071 A JPS57159071 A JP S57159071A JP 56043189 A JP56043189 A JP 56043189A JP 4318981 A JP4318981 A JP 4318981A JP S57159071 A JPS57159071 A JP S57159071A
Authority
JP
Japan
Prior art keywords
active layer
light
gate
layer
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56043189A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244827B2 (enrdf_load_stackoverflow
Inventor
Jitoku Okumura
Hirokuni Tokuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56043189A priority Critical patent/JPS57159071A/ja
Publication of JPS57159071A publication Critical patent/JPS57159071A/ja
Publication of JPS6244827B2 publication Critical patent/JPS6244827B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/287—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices having PN heterojunction gates
    • H10F30/2877—Field-effect phototransistors having PN heterojunction gates

Landscapes

  • Light Receiving Elements (AREA)
JP56043189A 1981-03-26 1981-03-26 Compound semiconductor device Granted JPS57159071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56043189A JPS57159071A (en) 1981-03-26 1981-03-26 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56043189A JPS57159071A (en) 1981-03-26 1981-03-26 Compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS57159071A true JPS57159071A (en) 1982-10-01
JPS6244827B2 JPS6244827B2 (enrdf_load_stackoverflow) 1987-09-22

Family

ID=12656966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56043189A Granted JPS57159071A (en) 1981-03-26 1981-03-26 Compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS57159071A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2557729A1 (fr) * 1983-12-28 1985-07-05 Olympus Optical Co Dispositif convertisseur photoelectrique a semi-conducteurs
JPS60233872A (ja) * 1984-03-28 1985-11-20 インタ−ナシヨナル・スタンダ−ド・エレクトリツク・コ−ポレイシヨン 半導体装置およびその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02295821A (ja) * 1989-05-09 1990-12-06 Takashi Ichihara 運搬車吊上げ傾倒排出装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2557729A1 (fr) * 1983-12-28 1985-07-05 Olympus Optical Co Dispositif convertisseur photoelectrique a semi-conducteurs
JPS60233872A (ja) * 1984-03-28 1985-11-20 インタ−ナシヨナル・スタンダ−ド・エレクトリツク・コ−ポレイシヨン 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPS6244827B2 (enrdf_load_stackoverflow) 1987-09-22

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