JPS57159022A - Heating device and method for semiconductor substrate - Google Patents
Heating device and method for semiconductor substrateInfo
- Publication number
- JPS57159022A JPS57159022A JP56044017A JP4401781A JPS57159022A JP S57159022 A JPS57159022 A JP S57159022A JP 56044017 A JP56044017 A JP 56044017A JP 4401781 A JP4401781 A JP 4401781A JP S57159022 A JPS57159022 A JP S57159022A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- wafer
- silicon
- heating
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- 238000011109 contamination Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Computer Hardware Design (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56044017A JPS57159022A (en) | 1981-03-27 | 1981-03-27 | Heating device and method for semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56044017A JPS57159022A (en) | 1981-03-27 | 1981-03-27 | Heating device and method for semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57159022A true JPS57159022A (en) | 1982-10-01 |
Family
ID=12679904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56044017A Pending JPS57159022A (en) | 1981-03-27 | 1981-03-27 | Heating device and method for semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57159022A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04299832A (ja) * | 1991-03-28 | 1992-10-23 | Ngk Insulators Ltd | 半導体ウエハー加熱装置 |
-
1981
- 1981-03-27 JP JP56044017A patent/JPS57159022A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04299832A (ja) * | 1991-03-28 | 1992-10-23 | Ngk Insulators Ltd | 半導体ウエハー加熱装置 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5588323A (en) | Manufacture of semiconductor device | |
JPS57159022A (en) | Heating device and method for semiconductor substrate | |
JPS57183041A (en) | Annealing method for chemical semiconductor | |
JPS5694750A (en) | Heating treatment device | |
US4433006A (en) | Process for oxidizing semiconducting compounds, especially gallium arsenide | |
JPS5615070A (en) | Semiconductor device | |
JPS5737824A (en) | Method and device for impurity diffusion | |
US3151008A (en) | Method of forming a p-nu junction | |
JPS57202726A (en) | Manufacture of semiconductor device | |
JPS6175517A (ja) | 化合物半導体基板のアニ−ル法 | |
JPS5769733A (en) | Heat treatment of semiconductor substrate | |
JP3260245B2 (ja) | 半導体ウエーハの熱処理炉及び半導体ウエーハの熱処理方法 | |
JPS60224217A (ja) | 二段拡散炉 | |
JPS5627990A (en) | Formation of semiconductor ohmic electrode | |
JPS57152175A (en) | Semiconductor magneto-electric effect device | |
JPH0240480Y2 (ja) | ||
JPS6223109A (ja) | 半導体基板のアニ−ル方法 | |
JPH02185037A (ja) | 短時間熱処理装置 | |
JPS5656643A (en) | Treating device for semiconductor substrate | |
JPS57166025A (en) | Heat treatment method for compound semiconductor device | |
JPS6074633A (ja) | ロ−ドロツク装置の試料加熱方法 | |
JPS60239398A (ja) | 化合物半導体のアニ−ル法 | |
JPH0521367A (ja) | 熱処理装置 | |
JPS57106133A (en) | Heat treatment for semiconductor wafer | |
JPS62291025A (ja) | 半導体基板のアニ−ル方法 |