JPS57166025A - Heat treatment method for compound semiconductor device - Google Patents

Heat treatment method for compound semiconductor device

Info

Publication number
JPS57166025A
JPS57166025A JP5147281A JP5147281A JPS57166025A JP S57166025 A JPS57166025 A JP S57166025A JP 5147281 A JP5147281 A JP 5147281A JP 5147281 A JP5147281 A JP 5147281A JP S57166025 A JPS57166025 A JP S57166025A
Authority
JP
Japan
Prior art keywords
substrate
base
compound semiconductor
si3n4
treated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5147281A
Other languages
Japanese (ja)
Inventor
Toshio Sugawa
Takeshi Konuma
Hideki Yakida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5147281A priority Critical patent/JPS57166025A/en
Publication of JPS57166025A publication Critical patent/JPS57166025A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To conduct heat treatment excellently, and to improve characteristics by forming protective films onto the surface and back of the compound semiconductor device and turning over and mounting the compound semiconductor to a base, while the surface thereof is particularly mirror-treated. CONSTITUTION:The surface and back of the semi-insulating GaAs substrate 13 into which Si ions are injected 14 are coated with the Si3N4 films 16 with approximately 1,200Angstrom thickness at a low temperature. The ion injecting layer 14 side is placed onto the flat quartz base 17 particularly mirror-treated, and the substrate 13 and the base 17 are fast stuck. The substrate 13 is heated at 600- 950 deg.C by means of an oven 18, and thermally treated in an Ar atmosphere 20. In this constitution, only the back of the substrate 13 is exposed directly to Ar 20, and when As in pin holes reaches fixed pressure GaAs further does not dissociate, an excellent crystal condition is kept and the substrate is thermally treated even when there are the pin holes in Si3N4 because the surface and the base are fast stuck. Accordingly, Si3N4 is thinned, thermal strain is reduced, cracking around a pattern is prevented, and electrical characteristics can be improved.
JP5147281A 1981-04-06 1981-04-06 Heat treatment method for compound semiconductor device Pending JPS57166025A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5147281A JPS57166025A (en) 1981-04-06 1981-04-06 Heat treatment method for compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5147281A JPS57166025A (en) 1981-04-06 1981-04-06 Heat treatment method for compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS57166025A true JPS57166025A (en) 1982-10-13

Family

ID=12887884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5147281A Pending JPS57166025A (en) 1981-04-06 1981-04-06 Heat treatment method for compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS57166025A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057923A (en) * 1983-09-09 1985-04-03 Nippon Telegr & Teleph Corp <Ntt> Method of homogenizing compound semiconductor crystal
JPS6134949A (en) * 1984-07-26 1986-02-19 Sumitomo Electric Ind Ltd Heat treatment for compound semiconductor substrate
JPS6292432A (en) * 1985-10-18 1987-04-27 Sharp Corp Manufacture of compound semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54104770A (en) * 1978-02-03 1979-08-17 Sony Corp Heat treatment method for 3-5 group compound semiconductor
JPS54162960A (en) * 1978-06-14 1979-12-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54104770A (en) * 1978-02-03 1979-08-17 Sony Corp Heat treatment method for 3-5 group compound semiconductor
JPS54162960A (en) * 1978-06-14 1979-12-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057923A (en) * 1983-09-09 1985-04-03 Nippon Telegr & Teleph Corp <Ntt> Method of homogenizing compound semiconductor crystal
JPS6134949A (en) * 1984-07-26 1986-02-19 Sumitomo Electric Ind Ltd Heat treatment for compound semiconductor substrate
JPS6292432A (en) * 1985-10-18 1987-04-27 Sharp Corp Manufacture of compound semiconductor device

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