JPS57136334A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57136334A
JPS57136334A JP56022740A JP2274081A JPS57136334A JP S57136334 A JPS57136334 A JP S57136334A JP 56022740 A JP56022740 A JP 56022740A JP 2274081 A JP2274081 A JP 2274081A JP S57136334 A JPS57136334 A JP S57136334A
Authority
JP
Japan
Prior art keywords
substrate
region
defects
surface layer
defect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56022740A
Other languages
English (en)
Japanese (ja)
Other versions
JPH023539B2 (enrdf_load_stackoverflow
Inventor
Shigenobu Akiyama
Takeshi Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56022740A priority Critical patent/JPS57136334A/ja
Publication of JPS57136334A publication Critical patent/JPS57136334A/ja
Publication of JPH023539B2 publication Critical patent/JPH023539B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP56022740A 1981-02-18 1981-02-18 Manufacture of semiconductor device Granted JPS57136334A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56022740A JPS57136334A (en) 1981-02-18 1981-02-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56022740A JPS57136334A (en) 1981-02-18 1981-02-18 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57136334A true JPS57136334A (en) 1982-08-23
JPH023539B2 JPH023539B2 (enrdf_load_stackoverflow) 1990-01-24

Family

ID=12091107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56022740A Granted JPS57136334A (en) 1981-02-18 1981-02-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57136334A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6184075A (ja) * 1984-09-18 1986-04-28 イギリス国 光起電力太陽電池
WO2007148490A1 (ja) * 2006-06-20 2007-12-27 Shin-Etsu Handotai Co., Ltd. シリコンウエーハの製造方法およびこれにより製造されたシリコンウエーハ
JP2008034849A (ja) * 2006-07-27 2008-02-14 Siltronic Ag 欠陥が減少した領域を有する単結晶半導体ウェーハおよびその製造方法
JP2009049256A (ja) * 2007-08-22 2009-03-05 Sumco Corp シリコンウェーハ及びその製造方法
WO2010016586A1 (ja) * 2008-08-08 2010-02-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638828A (en) * 1979-09-07 1981-04-14 Sony Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638828A (en) * 1979-09-07 1981-04-14 Sony Corp Manufacture of semiconductor device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6184075A (ja) * 1984-09-18 1986-04-28 イギリス国 光起電力太陽電池
US8377202B2 (en) 2006-06-20 2013-02-19 Shin-Etsu Handotai Co., Ltd. Method for manufacturing silicon wafer and silicon wafer manufactured by this method
WO2007148490A1 (ja) * 2006-06-20 2007-12-27 Shin-Etsu Handotai Co., Ltd. シリコンウエーハの製造方法およびこれにより製造されたシリコンウエーハ
JP2008028355A (ja) * 2006-06-20 2008-02-07 Shin Etsu Handotai Co Ltd シリコンウエーハの製造方法およびこれにより製造されたシリコンウエーハ
KR101340003B1 (ko) * 2006-06-20 2013-12-11 신에쯔 한도타이 가부시키가이샤 실리콘 웨이퍼의 제조방법 및 이에 의해 제조된 실리콘 웨이퍼
JP2008034849A (ja) * 2006-07-27 2008-02-14 Siltronic Ag 欠陥が減少した領域を有する単結晶半導体ウェーハおよびその製造方法
US8088219B2 (en) 2006-07-27 2012-01-03 Siltronic Ag Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it
US8216361B2 (en) 2006-07-27 2012-07-10 Siltronic Ag Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it
JP2012134516A (ja) * 2006-07-27 2012-07-12 Siltronic Ag 単結晶半導体ウェーハの製造方法
JP2009049256A (ja) * 2007-08-22 2009-03-05 Sumco Corp シリコンウェーハ及びその製造方法
WO2010016586A1 (ja) * 2008-08-08 2010-02-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハの製造方法
US8426297B2 (en) 2008-08-08 2013-04-23 Sumco Techxiv Corporation Method for manufacturing semiconductor wafer
US8853103B2 (en) 2008-08-08 2014-10-07 Sumco Techxiv Corporation Method for manufacturing semiconductor wafer

Also Published As

Publication number Publication date
JPH023539B2 (enrdf_load_stackoverflow) 1990-01-24

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