JPS57132353A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS57132353A JPS57132353A JP56018747A JP1874781A JPS57132353A JP S57132353 A JPS57132353 A JP S57132353A JP 56018747 A JP56018747 A JP 56018747A JP 1874781 A JP1874781 A JP 1874781A JP S57132353 A JPS57132353 A JP S57132353A
- Authority
- JP
- Japan
- Prior art keywords
- type
- transistor
- transistors
- collector
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000002955 isolation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56018747A JPS57132353A (en) | 1981-02-09 | 1981-02-09 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56018747A JPS57132353A (en) | 1981-02-09 | 1981-02-09 | Semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57132353A true JPS57132353A (en) | 1982-08-16 |
JPH0131304B2 JPH0131304B2 (enrdf_load_stackoverflow) | 1989-06-26 |
Family
ID=11980239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56018747A Granted JPS57132353A (en) | 1981-02-09 | 1981-02-09 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57132353A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5160996A (en) * | 1987-10-08 | 1992-11-03 | Matsushita Electric Industrial Co., Inc. | Structure and method of manufacture for semiconductor device |
US5292671A (en) * | 1987-10-08 | 1994-03-08 | Matsushita Electric Industrial, Co., Ltd. | Method of manufacture for semiconductor device by forming deep and shallow regions |
JPH077082A (ja) * | 1992-06-29 | 1995-01-10 | Korea Electron & Telecommun Res Inst | 半導体装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5434785A (en) * | 1977-08-24 | 1979-03-14 | Hitachi Ltd | Semiconductor integrated circuit device |
-
1981
- 1981-02-09 JP JP56018747A patent/JPS57132353A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5434785A (en) * | 1977-08-24 | 1979-03-14 | Hitachi Ltd | Semiconductor integrated circuit device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5160996A (en) * | 1987-10-08 | 1992-11-03 | Matsushita Electric Industrial Co., Inc. | Structure and method of manufacture for semiconductor device |
US5292671A (en) * | 1987-10-08 | 1994-03-08 | Matsushita Electric Industrial, Co., Ltd. | Method of manufacture for semiconductor device by forming deep and shallow regions |
JPH077082A (ja) * | 1992-06-29 | 1995-01-10 | Korea Electron & Telecommun Res Inst | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0131304B2 (enrdf_load_stackoverflow) | 1989-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5310984A (en) | Complementary type mos integrated circuit | |
JPS57132353A (en) | Semiconductor integrated circuit | |
ATE74228T1 (de) | Verfahren zur herstellung von halbleiterschaltungen um einen bipolaren transistor mit extrinsischen basengebieten zu bilden. | |
JPS6431452A (en) | Semiconductor integrated circuit containing current mirror | |
GB1496306A (en) | Semiconductor integrated circuit including an epitaxial base type vertical transistor | |
JPS5533007A (en) | Semiconductor intergated circuit | |
JPS545392A (en) | Semiconductor integrated circuit and its manufacture | |
JPS5615068A (en) | Semiconductor device and manufacture thereof | |
JPS54127689A (en) | Semiconductor integrated circuit | |
JPS6447064A (en) | Semiconductor device | |
FR2457564A1 (fr) | Transistor pnp pour circuit integre bipolaire et son procede de fabrication | |
JPS55107261A (en) | Semiconductor integrated circuit device | |
JPS54101289A (en) | Semiconductor device | |
JPS6463828A (en) | Semiconductor temperature detecting circuit | |
JPS5743460A (en) | Semiconductor device | |
JPS5541787A (en) | Semiconductor device | |
JPS57197835A (en) | Semiconductor device | |
JPS5265689A (en) | Semiconductor integrated circuit and its production | |
JPS57162361A (en) | Manufacture of semiconductor integrated circuit | |
JPS6432666A (en) | Surge protective integrated circuit | |
JPS5482179A (en) | Electrostatic inductive integrated circuit device | |
JPS57121307A (en) | Bias circuit | |
JPS54142080A (en) | Semiconductor device | |
JPS54137288A (en) | Self-compensating vertical pnp transistor | |
JPS56115555A (en) | Semiconductor integrated circuit device |