JPS57126170A - Semiconductor constant voltage device - Google Patents

Semiconductor constant voltage device

Info

Publication number
JPS57126170A
JPS57126170A JP1058281A JP1058281A JPS57126170A JP S57126170 A JPS57126170 A JP S57126170A JP 1058281 A JP1058281 A JP 1058281A JP 1058281 A JP1058281 A JP 1058281A JP S57126170 A JPS57126170 A JP S57126170A
Authority
JP
Japan
Prior art keywords
region
type
surface concentration
impurities
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1058281A
Other languages
English (en)
Inventor
Kazuo Hirano
Tatsumi Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1058281A priority Critical patent/JPS57126170A/ja
Publication of JPS57126170A publication Critical patent/JPS57126170A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
JP1058281A 1981-01-27 1981-01-27 Semiconductor constant voltage device Pending JPS57126170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1058281A JPS57126170A (en) 1981-01-27 1981-01-27 Semiconductor constant voltage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1058281A JPS57126170A (en) 1981-01-27 1981-01-27 Semiconductor constant voltage device

Publications (1)

Publication Number Publication Date
JPS57126170A true JPS57126170A (en) 1982-08-05

Family

ID=11754235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1058281A Pending JPS57126170A (en) 1981-01-27 1981-01-27 Semiconductor constant voltage device

Country Status (1)

Country Link
JP (1) JPS57126170A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119873A (ja) * 1982-12-27 1984-07-11 Nec Home Electronics Ltd パンチスル−型定電圧素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119873A (ja) * 1982-12-27 1984-07-11 Nec Home Electronics Ltd パンチスル−型定電圧素子

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