JPS5712549A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5712549A
JPS5712549A JP8733680A JP8733680A JPS5712549A JP S5712549 A JPS5712549 A JP S5712549A JP 8733680 A JP8733680 A JP 8733680A JP 8733680 A JP8733680 A JP 8733680A JP S5712549 A JPS5712549 A JP S5712549A
Authority
JP
Japan
Prior art keywords
layer
substrate
potential
layers
integration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8733680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6129553B2 (enrdf_load_stackoverflow
Inventor
Kenji Minami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8733680A priority Critical patent/JPS5712549A/ja
Publication of JPS5712549A publication Critical patent/JPS5712549A/ja
Publication of JPS6129553B2 publication Critical patent/JPS6129553B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP8733680A 1980-06-27 1980-06-27 Semiconductor device Granted JPS5712549A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8733680A JPS5712549A (en) 1980-06-27 1980-06-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8733680A JPS5712549A (en) 1980-06-27 1980-06-27 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5712549A true JPS5712549A (en) 1982-01-22
JPS6129553B2 JPS6129553B2 (enrdf_load_stackoverflow) 1986-07-07

Family

ID=13912022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8733680A Granted JPS5712549A (en) 1980-06-27 1980-06-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5712549A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6129553B2 (enrdf_load_stackoverflow) 1986-07-07

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