JPS57123891A - Melting method of raw material - Google Patents

Melting method of raw material

Info

Publication number
JPS57123891A
JPS57123891A JP459181A JP459181A JPS57123891A JP S57123891 A JPS57123891 A JP S57123891A JP 459181 A JP459181 A JP 459181A JP 459181 A JP459181 A JP 459181A JP S57123891 A JPS57123891 A JP S57123891A
Authority
JP
Japan
Prior art keywords
raw material
rod
crucible
single crystal
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP459181A
Other languages
Japanese (ja)
Inventor
Satao Yashiro
Sadao Matsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP459181A priority Critical patent/JPS57123891A/en
Publication of JPS57123891A publication Critical patent/JPS57123891A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To facilitate the temperature setting in a crucible and make it possible to carry out the continuous melting operation, by charging a rod-like sintered raw material into a melt in the crucible continuously with a pulling up rod, etc. in a pulling up apparatus of a single crystal of an oxide.
CONSTITUTION: A Pt-Rh synthetic crucible is charged with a sintered raw material of lithium tantalate in an amount of about 90% based on the maximal amount to be filled, and the raw material is then heated with a working coil 3 by the high-frequency heating method to melt most of the material completely for about 3hr. A rod-like sintered raw material 6 is then mounted to a rod-like pulling shaft 5 and then lowered to the crucible side 1. The sintered raw material 6 is then dipped in the raw mateial melt surface 2 and molten. The repeated operations provide the charging of the raw material to a given amount. After preparing a single crystal, the melt temperatue is reduced a little to pull up the single crystal, which is then taken out of a furnace. The rod-like sintered raw material in an amount to be taken out of the single crystal is then additionally charged into the crucible 1 in the same way as described above. A holding jig for exclusive use may be used in place of the pulling up shaft 5.
COPYRIGHT: (C)1982,JPO&Japio
JP459181A 1981-01-17 1981-01-17 Melting method of raw material Pending JPS57123891A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP459181A JPS57123891A (en) 1981-01-17 1981-01-17 Melting method of raw material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP459181A JPS57123891A (en) 1981-01-17 1981-01-17 Melting method of raw material

Publications (1)

Publication Number Publication Date
JPS57123891A true JPS57123891A (en) 1982-08-02

Family

ID=11588279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP459181A Pending JPS57123891A (en) 1981-01-17 1981-01-17 Melting method of raw material

Country Status (1)

Country Link
JP (1) JPS57123891A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0450191A (en) * 1990-06-20 1992-02-19 Kawasaki Steel Corp Method for charging raw material for single crystal
JP2004123510A (en) * 2002-06-13 2004-04-22 Hitachi Ltd Apparatus for manufacturing single crystal and method for manufacturing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5165084A (en) * 1974-12-03 1976-06-05 Nippon Electric Co TANKETSUSHOIKUSEISOCHI
JPS53109900A (en) * 1977-03-08 1978-09-26 Toshiba Corp Production of luthium tantalate single crystals

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5165084A (en) * 1974-12-03 1976-06-05 Nippon Electric Co TANKETSUSHOIKUSEISOCHI
JPS53109900A (en) * 1977-03-08 1978-09-26 Toshiba Corp Production of luthium tantalate single crystals

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0450191A (en) * 1990-06-20 1992-02-19 Kawasaki Steel Corp Method for charging raw material for single crystal
JP2004123510A (en) * 2002-06-13 2004-04-22 Hitachi Ltd Apparatus for manufacturing single crystal and method for manufacturing the same

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