JPS57121226A - Photo mask - Google Patents

Photo mask

Info

Publication number
JPS57121226A
JPS57121226A JP640481A JP640481A JPS57121226A JP S57121226 A JPS57121226 A JP S57121226A JP 640481 A JP640481 A JP 640481A JP 640481 A JP640481 A JP 640481A JP S57121226 A JPS57121226 A JP S57121226A
Authority
JP
Japan
Prior art keywords
pattern
line type
film
semitransparent
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP640481A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6161666B2 (enExample
Inventor
Naoki Koyama
Yoji Maruyama
Hiroshi Umezaki
Norikazu Tsumita
Ken Sugita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP640481A priority Critical patent/JPS57121226A/ja
Priority to US06/340,215 priority patent/US4415262A/en
Publication of JPS57121226A publication Critical patent/JPS57121226A/ja
Publication of JPS6161666B2 publication Critical patent/JPS6161666B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP640481A 1981-01-21 1981-01-21 Photo mask Granted JPS57121226A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP640481A JPS57121226A (en) 1981-01-21 1981-01-21 Photo mask
US06/340,215 US4415262A (en) 1981-01-21 1982-01-18 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP640481A JPS57121226A (en) 1981-01-21 1981-01-21 Photo mask

Publications (2)

Publication Number Publication Date
JPS57121226A true JPS57121226A (en) 1982-07-28
JPS6161666B2 JPS6161666B2 (enExample) 1986-12-26

Family

ID=11637425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP640481A Granted JPS57121226A (en) 1981-01-21 1981-01-21 Photo mask

Country Status (2)

Country Link
US (1) US4415262A (enExample)
JP (1) JPS57121226A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02207253A (ja) * 1989-02-07 1990-08-16 Rohm Co Ltd パターン形成用フォトマスク及び露光方法
JP2010287656A (ja) * 2009-06-10 2010-12-24 Toshiba Corp 固体撮像装置の製造方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4666292A (en) * 1984-08-24 1987-05-19 Nippon Kogaku K.K. Projection optical apparatus and a photographic mask therefor
US4668083A (en) * 1985-11-18 1987-05-26 The Perkin-Elmer Corporation Contact lithographic fabrication of patterns on large optics
US4684436A (en) * 1986-10-29 1987-08-04 International Business Machines Corp. Method of simultaneously etching personality and select
US6132908A (en) * 1990-10-26 2000-10-17 Nikon Corporation Photo mask and exposure method using the same
US5288569A (en) * 1992-04-23 1994-02-22 International Business Machines Corporation Feature biassing and absorptive phase-shifting techniques to improve optical projection imaging
TW505829B (en) * 1992-11-16 2002-10-11 Dupont Photomasks Inc A transmissive embedded phase shifter-photomask blank
US5415953A (en) * 1994-02-14 1995-05-16 E. I. Du Pont De Nemours And Company Photomask blanks comprising transmissive embedded phase shifter
KR960005756A (ko) * 1994-07-28 1996-02-23 김주용 반도체 소자 제조용 포토 마스크 제작 방법
KR0161389B1 (ko) * 1995-02-16 1999-01-15 윤종용 마스크 및 이를 사용한 패턴형성방법
US5821013A (en) * 1996-12-13 1998-10-13 Symbios, Inc. Variable step height control of lithographic patterning through transmitted light intensity variation
US5718991A (en) * 1996-12-27 1998-02-17 Industrial Technology Research Institute Method for making photomasks having regions of different light transmissivities
TW413844B (en) 1998-11-26 2000-12-01 Samsung Electronics Co Ltd Manufacturing methods of thin film transistor array panels for liquid crystal displays and photolithography method of thin films
TW413949B (en) 1998-12-12 2000-12-01 Samsung Electronics Co Ltd Thin film transistor array panels for liquid crystal displays and methods of manufacturing the same
US6534425B1 (en) * 1999-12-02 2003-03-18 Seagate Technology Llc Mask design and method for controlled profile fabrication
KR100372579B1 (ko) 2000-06-21 2003-02-17 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판과 그 제조방법
US6391499B1 (en) * 2000-06-22 2002-05-21 Lg Philips Lcd Co., Ltd. Light exposure mask and method of manufacturing the same
DE10038928A1 (de) * 2000-08-09 2002-02-28 Infineon Technologies Ag Photolithographische Maske
AU2003222799A1 (en) * 2002-04-15 2003-10-27 Carl Zeiss Smt Ag Interferometric measuring device and projection illumination installation comprising one such measuring device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1143611A (enExample) * 1965-03-22
US3476658A (en) * 1965-11-16 1969-11-04 United Aircraft Corp Method of making microcircuit pattern masks

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02207253A (ja) * 1989-02-07 1990-08-16 Rohm Co Ltd パターン形成用フォトマスク及び露光方法
JP2010287656A (ja) * 2009-06-10 2010-12-24 Toshiba Corp 固体撮像装置の製造方法

Also Published As

Publication number Publication date
JPS6161666B2 (enExample) 1986-12-26
US4415262A (en) 1983-11-15

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