JPS57143785A - Magnetic bubble memory element - Google Patents

Magnetic bubble memory element

Info

Publication number
JPS57143785A
JPS57143785A JP2679281A JP2679281A JPS57143785A JP S57143785 A JPS57143785 A JP S57143785A JP 2679281 A JP2679281 A JP 2679281A JP 2679281 A JP2679281 A JP 2679281A JP S57143785 A JPS57143785 A JP S57143785A
Authority
JP
Japan
Prior art keywords
memory element
magnetic bubble
bubble memory
mask
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2679281A
Other languages
Japanese (ja)
Inventor
Shinzo Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2679281A priority Critical patent/JPS57143785A/en
Publication of JPS57143785A publication Critical patent/JPS57143785A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a magnetic bubble memory element less dispersion in dimension over a wide range, by splitting the element into suitable regions and forming the element through exposure to resist with a plurality of photo masks.
CONSTITUTION: In forming the 1st conductive layer of a magnetic bubble memory element, the element is split up and down into two to form the upper half mask ordinary drawing 6 and the lower half ordinary drawing 9. Mask alignment patterns 7, 8 and 11 and a pattern 12 to avoid exposure are provided. Photo masks (a) and (b) having patterns 14 and 15 shrinking the ordinary drawings 6 and 9 into 1/10 are made. First, the photo mask (a) is exposed and developed on a resist to form a resist pattern on a substrate. Next, after mask alignment using a mask alignment pattern 7, a resist pattern by the photo mask (b) is made. This is done as the same for the 2nd and succeeding layers. Thus, the magnetic bubble memory element without dispersion of size over a wide range is achieved.
COPYRIGHT: (C)1982,JPO&Japio
JP2679281A 1981-02-27 1981-02-27 Magnetic bubble memory element Pending JPS57143785A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2679281A JPS57143785A (en) 1981-02-27 1981-02-27 Magnetic bubble memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2679281A JPS57143785A (en) 1981-02-27 1981-02-27 Magnetic bubble memory element

Publications (1)

Publication Number Publication Date
JPS57143785A true JPS57143785A (en) 1982-09-06

Family

ID=12203162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2679281A Pending JPS57143785A (en) 1981-02-27 1981-02-27 Magnetic bubble memory element

Country Status (1)

Country Link
JP (1) JPS57143785A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5889805A (en) * 1981-11-25 1983-05-28 Fujitsu Ltd Manufacture of magnetic bubble memory element
JPS58200485A (en) * 1982-05-19 1983-11-22 Hitachi Ltd Magnetic bubble element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5889805A (en) * 1981-11-25 1983-05-28 Fujitsu Ltd Manufacture of magnetic bubble memory element
JPH0213392B2 (en) * 1981-11-25 1990-04-04 Fujitsu Ltd
JPS58200485A (en) * 1982-05-19 1983-11-22 Hitachi Ltd Magnetic bubble element
JPH0223956B2 (en) * 1982-05-19 1990-05-25 Hitachi Ltd

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