JPS57112011A - Heat treatment equipment for semiconductor wafer - Google Patents

Heat treatment equipment for semiconductor wafer

Info

Publication number
JPS57112011A
JPS57112011A JP18727380A JP18727380A JPS57112011A JP S57112011 A JPS57112011 A JP S57112011A JP 18727380 A JP18727380 A JP 18727380A JP 18727380 A JP18727380 A JP 18727380A JP S57112011 A JPS57112011 A JP S57112011A
Authority
JP
Japan
Prior art keywords
reaction tube
temperature
section
heat treatment
treatment equipment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18727380A
Other languages
Japanese (ja)
Inventor
Kenichiro Kaneko
Masaaki Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18727380A priority Critical patent/JPS57112011A/en
Publication of JPS57112011A publication Critical patent/JPS57112011A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To uniformly maintain the temperature in the reaction tube of the subject heat treatment equipment by a method wherein a main heater section and a correcting heater section, located on both sides of the main heater section, are provided around the reaction tube constituting the heat treatment equipment. CONSTITUTION:On the circumference of the quartz reaction tube 1 having an air admission port 4 and an air exhaust port 5, the main heater section 6 and the correcting heater sections 7 and 8, pinching the main heater section, are provided and a plurality of semiconductor wafers 2 standing on the boat 3 are placed in the reaction tube 1. Then, control sections 9 and 11 are connected to the correcting heater sections 7 and 8 respectively, a measuring instruments 12 and 14 are inserted in the reaction tube 1 corresponding to the control sections 9 and 11, and in the same manner, a control section 10 and a measuring instrument 13 corresponding to the control section 10 are provided. Then, the temperature is set at T1-T3 by corresponding to the temperature in the reaction tube 1 using the control section, the temperature in the reaction tube is uniformalized, and the transient temperature variation at the time of wafer insertion can be quickly recovered.
JP18727380A 1980-12-29 1980-12-29 Heat treatment equipment for semiconductor wafer Pending JPS57112011A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18727380A JPS57112011A (en) 1980-12-29 1980-12-29 Heat treatment equipment for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18727380A JPS57112011A (en) 1980-12-29 1980-12-29 Heat treatment equipment for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS57112011A true JPS57112011A (en) 1982-07-12

Family

ID=16203098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18727380A Pending JPS57112011A (en) 1980-12-29 1980-12-29 Heat treatment equipment for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS57112011A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125832U (en) * 1983-02-14 1984-08-24 日本電気株式会社 heat treatment equipment
JPS6049624U (en) * 1983-09-13 1985-04-08 富士通株式会社 heat treatment equipment
JPS60211913A (en) * 1984-04-06 1985-10-24 Hitachi Ltd Processing device
JPS6185821A (en) * 1984-10-04 1986-05-01 Matsushita Electric Ind Co Ltd Vapor growth method
JPS61152010A (en) * 1984-12-26 1986-07-10 Hitachi Ltd Heat treating device for semiconductor wafer
JPS63263730A (en) * 1987-04-22 1988-10-31 Nec Corp Heat treatment device for semiconductor wafer
JPS63278227A (en) * 1987-05-08 1988-11-15 Teru Sagami Kk Heat treatment equipment
JPH08321472A (en) * 1996-06-24 1996-12-03 Hitachi Ltd Processor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125832U (en) * 1983-02-14 1984-08-24 日本電気株式会社 heat treatment equipment
JPH0319222Y2 (en) * 1983-02-14 1991-04-23
JPS6049624U (en) * 1983-09-13 1985-04-08 富士通株式会社 heat treatment equipment
JPS60211913A (en) * 1984-04-06 1985-10-24 Hitachi Ltd Processing device
JPS6185821A (en) * 1984-10-04 1986-05-01 Matsushita Electric Ind Co Ltd Vapor growth method
JPS61152010A (en) * 1984-12-26 1986-07-10 Hitachi Ltd Heat treating device for semiconductor wafer
JPS63263730A (en) * 1987-04-22 1988-10-31 Nec Corp Heat treatment device for semiconductor wafer
JPS63278227A (en) * 1987-05-08 1988-11-15 Teru Sagami Kk Heat treatment equipment
JPH08321472A (en) * 1996-06-24 1996-12-03 Hitachi Ltd Processor

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